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Basic Properties of InGaN and In-rich Group III-Nitrides
Evidence of P-type InN, InGaN Alloys
Dilute Nitrides
Dilute Oxides
Full composition GaNAs HMA
Pulsed Laser Melting (PLM)
Application: Multiband Solar Cell
Application: Photo-electrochemical Cell (PEC)
Band Anti-crossing Model
Band offsets of semiconductors
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New patent granted
posted
Apr 21, 2012, 5:20 PM
by Kin Yu
U.S. Patent No. 8,039,740,
"Single P-N junction tandem photovolatic device,"
by Walukiewicz, Ager and Yu, has been issued, October 2011. (
patent
)
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