
Dr. Kin Man Yu received his Ph. D. in Materials Science and Mineral Engineering at UC Berkeley in 1987.
AREAS OF EXPERTISE:
- Ion beam modification of semiconductors
- Ion beam and x-ray analysis of materials
- Structural, Optical and electrical characterization of semiconductor materials
- Synchrotron based X-ray Absorption measurements on crystalline and amorphous materials
CURRENT RESEARCH INTERESTS:
- Synthesis of novel semiconductor alloy materials using highly non-equilibrium energetic beam techniques
- Synthesis and characterization of highly mismatched III-N-V and II-O-V
- Ion beam analysis of ferromagnetic III-Mn-V alloy semiconductors
- Development of novel II-VI materials for intermediate band solar cells
- Defects in InGaN materials for photovoltaic applications
- Electron transport in semiconductors under non-equilibrium processing conditions
PUBLICATIONS:
Over 340 articles published in refereed journals and conference proceedings (1985-2006)
Selected recent publications:
1.
K. M. Yu, W. Walukiewicz, W. Shan, J. W. Ager III, J. Wu, E. E. Haller,
J. F. Geisz, D. J. Friedman, J. M. Olson, and Sarah R. Kurtz,
"Nitrogen-Induced Enhancement of the Maximum Electron Concentration in
Group III-N-V Alloys," Phys. Rev. B61, R13337 (2000). 2. K. M. Yu,
W. Walukiewicz, W. Shan, J. Wu, J. W. Ager III, E. E. Haller, J. F.
Geisz, and M.C. Ridgway, "Nitrogen-Induced Enhancement of the Electron
Concentration in Sulfur Implanted GaNxAs1-x," Appl. Phys. Lett. 77,
2858 (2000).
3. K. M. Yu, W. Walukiewicz, W. Shan, J. Wu, J. W. Beeman, J. W. Ager
III, E. E. Haller, H. P. Xin, and C. W. Tu, "Synthesis of InNxP1-x Thin
Films by N Ion Implantation," Appl. Phys. Lett. 78, 1077 (2001).
4. K. M. Yu, W. Walukiewicz, J. Wu, J. W. Beeman, J. W. Ager III, E. E.
Haller, W. Shan, H. P. Xin, C. W. Tu, and M. C. Ridgway, "Formation of
Diluted III-V Nitrides by N Ion Implantation," J. Appl. Phys. 90, 2227
(2001).
5. K. M. Yu, W. Walukiewicz, J. Wu, J. W. Beeman, J. W. Ager, E. E.
Haller, I. Miotkowski, A. K. Ramdas, and P. Becla, "Group II-Ox-VI1-x
Highly Mismatched Alloys: Band Anticrossing in Cd1-yMnyOxTe1-x Alloys
Synthesized by O ion implantation," Appl. Phys. Lett. 80, 1571 (2002).
6. K. M. Yu, W. Walukiewicz, T. Wojtowicz, I. Kuryliszyn, X. Liu, Y.
Sasaki, and J.K. Furdyna, "Effect of the location of Mn sites in
ferromagnetic Ga1-xMnxAs on its Curie temperature," Phys. Rev. B65,
201303(R) (2002).
7. K. M. Yu, W. Walukiewicz, T. Wojtowicz, W.L. Lim, X. Liu, Y. Sasaki,
M. Dobrowolska, and J.K. Furdyna, "Determination of Hole Concentration
in Ferromagnetic GaMnAs Using Electrochemical Capacitance-Voltage
Profiling," Appl. Phys. Lett. 81, 845 (2002).
8. K. M. Yu, W. Walukiewicz, J. Wu, D. Mars, D. R Chamberlin M. A.
Scarpulla, O. D. Dubon, and J. F. Geisz, , "Mutual Passivation of
Electrically Active and Isovalent Impurities," Nature Materials 1, 185
(2002).
9. K. M. Yu and W. Walukiewicz, T. Wojtowicz, W.L. Lim, X. Liu, Y.
Sasaki, M. Dobrowolska, and J. K. Furdyna, "Curie Temperature Limit in
Ferromagnetic Ga1-xMnxAs," Phys. Rev. B68, 041308(R) (2003).
10. K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, and J. W. Beeman, M. A.
Scarpulla, O. D. Dubon, and P. Becla, "Diluted II-VI Oxide
Semiconductors with Multiple Band Gaps," Phys. Rev. Lett. 91, 246203
(2003).
11. K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, and J. W. Beeman, M. A.
Scarpulla, O. D. Dubon, and P. Becla, "Synthesis and Optical Properties
of II-O-VI Highly Mismatched Alloys," J. Appl. Phys.95, 6232 (2004).
12. K. M. Yu, W. Walukiewicz, T. Wojtowicz, J. Denlinger, M. A.
Scarpulla, X. Liu, and J. K. Furdyna, "The Effect of Film Thickness on
the Incorporation of Mn Interstitials in Ga1-xMnxAs," Appl. Phys.
Lett., 86, 042102, 2005.
13. K. M. Yu, Z. Liliental-Weber, W. Walukiewicz, S. X. Li, R. E.
Jones, W. Shan, J. W. Ager III, E. E. Haller, Hai Lu, and William J.
Schaff, "On the Crystalline Structure, Stoichiometry and Band Gap of
InN Thin Films," Appl. Phys. Lett., 86, 071910 (2005).
14. K. M. Yu, W. Walukiewicz, J.W. Ager III, D. Bour, R. Farshchi, O.
D. Dubon, S. X. Li, I. D. Sharp, and E. E. Haller, "Multiband GaNAsP
Quaternary Alloys," Appl. Phys. Lett. 88, 092110 (2006).
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