Dr.
Zuzanna Liliental-Weber is a Senior Scientist in Materials Science
Division of the Lawrence Berkeley National Laboratory. She obtained her
PhD in Physics in 1978 from the Institute of Physics Polish Academy of
Sciences, Warsaw, Poland. She has spent more than 4 years as Faculty
Research Associate in Arizona State University, Tempe, AZ working on
dark line defects in GaAs/AlGaAs light emitting diodes and interface
roughness using different electron microscopy methods. Since 1984 she
has been working in LBNL using state-of-the art electron microscopy
techniques to characterize defects in semiconductor thin films and
interfaces. Her special interest is the influence of structural defects
on the optical and electrical properties of semiconductor thin films
and interfaces, such as dislocations and planar defects in
III-nitrides, off-stoichiometric III-V thin film semiconductors,
ordered structures and metal contacts to different type of
semiconductors. She supervises graduate students and visiting
researchers and cooperates with scientists from several universities,
industries, and national laboratories. She collaborates with all PIs
from the Electronic Materials Program within LBNL and works on several
collaborative projects like: a band gap of InN and relation to the
structural properties of this material, the Stokes shift between an
absorption edge and photoluminescence in the InGaN due to compositional
modulation in this material, and on irradiation hardness of InN and
related structures. She is author or co-author of about 400
publications in refereed journals and conference proceedings, 6 book
chapters and editor of two books. She gave more than 80 invited talks
at well recognized international conferences or research institutions.
Dr. Liliental-Weber recent contribution in a field of GaN and InGaN
includes:
- first determination of growth polarity using
CBED, an extremely important material property influencing growth rate
and electronic properties of this material
- dislocation core of screw dislocations in MBE grown Ga-rich and Ga-lean GaN
- discovery of ordering in bulk GaN:Mg grown with N-polarity (equally distributed flat inversion domains)
-
formation of pyramidal defects in GaN:Mg and determination of their
atomic structure by using direct reconstruction of the scattered
electron wave in a transmission electron microscope.
Back to List
of People
|
