Dr. Kin Man Yu
Dr. Kin Man Yu received his Ph. D. in Materials Science and Mineral Engineering at UC Berkeley in 1987. AREAS OF EXPERTISE:
§ Ion beam modification/processing/synthesis of semiconductors
§ Structural, Optical and electrical characterization of semiconductor materials
§ Defects in semiconductors
§ Photovoltaic materials
CURRENT RESEARCH INTERESTS:
- Design, synthesize and characterize novel highly mismatched III-V and II-V semiconductor alloys for photovoltaic applications
- Structural, optical and electrical properties of group III nitrides for full spectrum PV applications
- Ion beam analysis and modifications of semiconductors
https://sites.google.com/a/lbl.gov/rbs-lab/home PUBLICATIONS: Over 400 articles published in refereed journals and conference proceedings (1985-2011) Selected recent publications: K. M. Yu, W. Walukiewicz, W. Shan, J. W. Ager III, J. Wu, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and Sarah R. Kurtz, "Nitrogen-Induced Enhancement of the Maximum Electron Concentration in Group III-N-V Alloys," Phys. Rev. B61, R13337 (2000). (pdf) K. M. Yu, W. Walukiewicz, J. W. Beeman, M. A. Scarpulla, O. Dubon, M. R. Pillai, and M. Aziz, “Enhanced Nitrogen Incorporation by Pulsed Laser Annealing of GaNxAs1-x Formed by N Implantation,” Appl. Phys. Lett. 80, 3958 (2002).(pdf) K. M. Yu, W. Walukiewicz, T. Wojtowicz, I. Kuryliszyn, X. Liu, Y. Sasaki, and J.K. Furdyna, "Effect of the location of Mn sites in ferromagnetic Ga1-xMnxAs on its Curie temperature," Phys. Rev. B65, 201303(R) (2002). (pdf) K. M. Yu, W. Walukiewicz, J. Wu, D. Mars, D. R Chamberlin M. A. Scarpulla, O. D. Dubon, and J. F. Geisz, , "Mutual Passivation of Electrically Active and Isovalent Impurities," Nature Materials 1, 185 (2002). (pdf) K. M. Yu and W. Walukiewicz, T. Wojtowicz, W.L. Lim, X. Liu, Y. Sasaki, M. Dobrowolska, and J. K. Furdyna, "Curie Temperature Limit in Ferromagnetic Ga1-xMnxAs," Phys. Rev. B68, 041308(R) (2003). (pdf) K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, and J. W. Beeman, M. A. Scarpulla, O. D. Dubon, and P. Becla, "Diluted II-VI Oxide Semiconductors with Multiple Band Gaps," Phys. Rev. Lett. 91, 246203 (2003). (pdf) K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, and J. W. Beeman, M. A. Scarpulla, O. D. Dubon, and P. Becla, "Synthesis and Optical Properties of II-O-VI Highly Mismatched Alloys," J. Appl. Phys. 95, 6232 (2004).(pdf) K. M. Yu, Z. Liliental-Weber, W. Walukiewicz, S. X. Li, R. E. Jones, W. Shan, J. W. Ager III, E. E. Haller, Hai Lu, and William J. Schaff, "On the Crystalline Structure, Stoichiometry and Band Gap of InN Thin Films," Appl. Phys. Lett., 86, 071910 (2005). (pdf) S. X. Li, K. M. Yu, R. E. Jones, J. Wu, W. Walukiewicz, J. W. Ager III, W. Shan, E. E. Haller, Hai Lu, and William J. Schaff, “Fermi level stabilization energy in group III-nitrides,” Phys. Rev. B71, 1612(R) (2005). (pdf) K. M. Yu, W. Walukiewicz, J.W. Ager III, D. Bour, R. Farshchi, O. D. Dubon, S. X. Li, I. D. Sharp, and E. E. Haller, "Multiband GaNAsP Quaternary Alloys," Appl. Phys. Lett. 88, 092110 (2006). (pdf) R.E. Jones, K. M. Yu, S. X. Li, W. Walukiewicz, J. W. Ager III, E. E. Haller, H. Lu, and W.J. Schaff, “Evidence for p-type doping of InN,” Phys. Rev. Lett. 96, 125505 (2006).(pdf) K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly Mismatched GaN1-xAsx Alloys in the Whole Composition Range,” J. Appl. Phys. 106, 103709 (2009). (pdf) K. M. Yu, S. V. Novikov, R. Broesler, Z. Liliental-Weber, A. X. Levander, O. D. Dubon, J. Wu, W. Walukiewicz, and C. T. Foxon, “Low Gap Amorphous GaN1-xAsx Alloys Grown on Glass Substrate,” Appl. Phys. Lett. 97, 101906 (2010). (pdf) A. X. Levander, K. M. Yu, S. Novikov, A. Tseng, W. Walukiewicz, C. T. Foxon, O. D. Dubon, J. Wu, “GaN1-xBix: Extremely Mismatched Semiconductor Alloys,” Appl. Phys. Lett. 97, 141919 (2010). (pdf) Nair. López, Lothar. A. Reichertz, K. M. Yu, Kenneth Campman, and Wladek. Walukiewicz, “Engineering the Electronic Band Structure for Multiband Solar Cells,” Phys. Rev. Lett. 106, 028701 (2011). (pdf) |
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