Publications


Book Chapters and Invited Reviews

  • Peter R. Stone, Oscar D. Dubon, Michael A. Scarpulla, and Kin M. Yu, “Ga1-xMnxP Syntheisized by Ion Implantation and Pulsed Laser Melting,” in Handbook of Spintronic Semiconductors, eds. Weimin M. Chen and Irinda A. Buyanova (Pan Stanford Publishing Pte. Ltd, Singapore, 2010) Chapter 5, p. 157-180.
  • K. Alberi, K. M. Yu and W. Walukiewicz, “Electronic Structure of Mn in III-Mn-V Ferromagnetic Semiconductors,” in Handbook of Spintronic Semiconductors, eds. Weimin M. Chen and Irinda A. Buyanova (Pan Stanford Publishing Pte. Ltd, Singapore, 2010) Chapter 4, p. 123-156.
  • W. Walukiewicz, K. M. Yu, J. W. Ager III,  R. E. Jones, and N. Miller, “Electronic Properties of InN and InGaN: Defects and Doping,” in Indium Nitride and Related Alloys, eds. T. D. Veal, C. F. McConville, and W. J. Schaff (CRC Press, Boca Raton, Fl, 2010) Chapter 10.
  • K. M. Yu, T. Wojtowicz, W. Walukiewicz, X. Liu, and J. K. Furdyna, “Fermi level effects on Mn incorporation in III-Mn-V ferromagnetic semiconductors,” Semiconductors and Semimetals, Volume 82, Spintronics, Edited By Tomasz Dietl, David Awschalom, Maria Kaminska, Hideo Ohnn, Chapter 3, Pages 89-133 (Elsevier 2008).
  • W. Walukiewicz, K. Alberi, J. Wu, W. Shan, K. M. Yu, and J. W. Ager III, “Electronic Band Structure of Highly Mismatched Semiconductor Alloys,” in Physics Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology, edited by Ayse Erol (Springer-Verlag Berlin-Heidelberg 2008) Chapter 3.
  • K. M. Yu, M. A. Scarpulla, W. Shan, J. Wu, J. W. Beeman, J. B. Jasinski, Z. Liliental-Weber, O. D. Dubon, and W. Walukiewicz, “Energetic Beam Synthesis of Dilute Nitrides and Related Alloys,” in Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology, edited by Ayse Erol (Springer-Verlag Berlin-Heidelberg 2008) Chapter 1.
  • W. Walukiewicz, J. W. Ager III, K. M. Yu, Z. Liliental-Weber, J. Wu, S. X. Li, R. E. Jones, and J. D. Denlinger, “Structure and Electronic Properties of InN and In-rich Group III-Nitride Alloys,” J. Physics D 39, R85 (2006).
  • W. Shan, W. Walukiewicz, K.M. Yu, J. Wu, J.W. Ager III, and E.E. Haller, “New Development in Dilute Nitride Materials Resaerch,” in III-Nitride Semiconductor Materials, edited by Zhe Chuan Feng (World Scientific, Singapore, 2006). Chapter 12.
  • W. Walukiewicz, W. Shan, J. Wu, K. M. Yu, and J. W. Ager III, “Band Anticrossing and Related Electronic Structure in III-N-V Alloys,” in Dilute Nitride Semiconductors, edited by M. Henini (Elsevier, Oxford, UK, 2005) Chapter 10, p. 325-392.
  • W. Shan, K. M. Yu, W. Walukiewicz, J. Wu, J.W. Ager III, and E.E. Haller, “Band Anticrossing in Dilute Nitrides,” J. Phys. 16, S3355 (2004).
  • W. Walukiewicz, W. Shan, J. Wu, and K. M. Yu, “Band Anticrossing in III-N-V Alloys: Theory and Experiments,” in Physics and Applications of Dilute Nitrides, edited by Irina Buyanova and Weimin Chen (Taylor & Francis, New York, 2004) Chapter 2, p. 23-64.
  • K. M. Yu, “Ion Beam Synthesis and n-type Doping of Group III-Nx-V1-x Alloys,” Semicond. Sci. Technol. 17, 785 (2002).

Nitrides and Oxides

2014

  • D. M. Detert, K. Tom, C. Battaglia, J. Denlinger, S. H. M. Lim, A. Javey, A. Anders, O. D. Dubon, K. M. Yu, and W. Walukiewicz, “Fermi level stabilization and band edge energies in CdxZn1-xO Alloys,” J. Appl. Phys. 115, 233708 (2014).


2013
  • R.R. Lieten, W.-J. Tseng, K.M. Yu, W. Van de Graaf, J.-P. Locquet, “Single crystalline InxGa1-xN layers on germanium by molecular beam epitaxy,” Cryst. Eng. Comm. 15, 9121 (2013).
  • Guibin Chen, K. M. Yu, L. A. Reichertz, and W. Walukiewicz, “Material Properties of Cd1−xMgxO alloys Synthesized by Radio-Frequency Sputtering,” Appl. Phys. Lett. 103, 041902 (2013).
  • Douglas M. Detert, Sunnie H.M. Lim, Kyle Tom, Alexander V. Luce, André Anders, Oscar D. Dubon, Kin Man Yu, Wladek Walukiewicz, “Crystal Structure and Properties of CdxZn1-xO Alloys Across the Full Composition Range,” Appl. Phys. Lett., 102, 232103 (2013).
  • K. Wang, T. Katsuki, J. Sakaguchi, T. Araki, Y. Nanishi, K. M. Yu, M. A. Mayer, E. Alarcon-Llado, J. W. Ager III, W. Walukiewicz, “P-type InGaN across the entire alloy composition range,” Appl. Phys. Lett. 102, 102111 (2013).
  • Douglas M. Detert, Sunnie H.M. Lim, Kyle Tom, Alexander V. Luce, André Anders, Oscar D. Dubon, Kin Man Yu, Wladek Walukiewicz, “Crystal Structure and Properties of CdxZn1-xO Alloys Across the Full Composition Range,” Appl. Phys. Lett. in press (2013).
  • Mark A. Hoffbauer, Todd L. Williamson, Joshua J. Williams, and Julia L. Fordham, “In-rich InGaN thin films: progress on growth, compositional uniformity, and doping for device applications,” J. Vac. Sci. Technol. B31, 03C114 (2013).
2012
  • Marius Millot, Zachary M. Geballe, Kin M. Yu, Wladek Walukiewicz, and Raymond Jeanloz, “Red-green luminescence in Indium Gallium Nitride alloys investigated by high pressure optical spectroscopy,” Appl. Phys. Lett., 100, 162103 (2012).
  • Marie A. Mayer, Kin Man Yu, Eugene E. Haller, Wladek Walukiewicz, “Tuning structural, electrical and optical properties of oxide alloys: ZnO1-xSex,” J. Appl. Phys. 111, 113505 (2012).
  • Kin Man Yu, Marie A. Mayer, Derrick T. Speaks, Hongcai He, Ruying Zhao, L. Hsu, Samuel S. Mao, E. E. Haller, and Wladek Walukiewicz, “Ideal Transparent Conductors for Full Spectrum Photovoltaics,” J. Appl. Phys. 111, 123505 (2012).
  • Marie A. Mayer, Derrick T. Speaks, Jonathan D. Denlinger, Lothar Reichertz, Jeff Beeman, Kin Man Yu, Eugene E. Haller, and Wladek Walukiewicz, “ZnO1-xSex as a photoelectrochemical anodic absorber,” J. Phys. Chem. C116, 15281 (2012).
  • Kin Man Yu, Marie A. Mayer, Derrick T. Speaks, Hongcai He, Ruying Zhao, L. Hsu, Samuel S. Mao, E. E. Haller, and Wladek Walukiewicz, “Transparent Conductors for Full Spectrum Photovoltaics,” Proc. of the 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, 002024 – 002029. 

2011 2010
  • D. T. Speaks, M. A. Mayer, K. M. Yu, S. S. Mao, E. E. Haller, and W. Walukiewicz, "Fermi level stabilization energy in cadmium oxide,"Journal of Applied Physics 107, 113706 (2010).
  • I. N. Demchenko, J. D. Denlinger, M. Chernyshova, K. M. Yu, D. Speaks, P. Olalde-Velasco, O. Hemmers, W. Walukiewicz, A. Derkachova, and K. Lawniczak-Jablonska, “Full multiple scattering analysis of XANES at the Cd L3- and O K-edges in CdO films combined with a soft-X-ray emission investigation,” Phys. Rev. B82, 075107 (2010).
  • G. F. Brown, J. W. Ager III, W. Walukiewicz, and J. Wu, “Finite element simulations of compositionally graded InGaN solar cells,” Solar Energy Materials & Solar Cells 94, 478 (2010).
  • M. Goiran, M. Millot, J.-M. Poumirol, I. Gherasoiu, W. Walukiewicz, and J. Leotin, “Electron cyclotron effective mass in indium nitride,” Appl. Phys. Lett. 96, 052117 (2010).
  • I. Gherasoiu, K. M. Yu, , L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager, and W. Walukiewicz, “High Quality InxGa1-xN thin films with x>0.2 grown on Silicon,” Phys. Status Solidi B 247, No. 7, 1747–1749 (2010).
  • N. Miller, J. W. Ager III, H. M. Smith III, M. A. Mayer, K. M. Yu, E. E. Haller, W. Walukiewicz, W. J. Schaff, C. Gallinat, G. Koblmüller, and J. S. Speck, “Hole transport and photoluminescence in Mg-doped InN,” J. Appl. Phys. 107, 113712 (2010).
  • Floris Reurings, Christian Rauch, Filip Tuomisto, Rebecca E. Jones, Kin M. Yu, Wladek Walukiewicz, and William J. Schaff, “Defect redistribution in post-irradiation rapid-thermal-annealed InN,” Phys. Rev. B 82, 153202 (2010).
  • Marie A. Mayer, Derrick T. M Speaks, Kin Man Yu, Samuel S. Mao, Eugene E. Haller, and Wladek Walukiewicz, “Band structure engineering of ZnO1-xSex alloys,” Appl. Phys. Lett. 97, 022104 (2010).
  • Floris Reurings, Filip Tuomisto, Werner Egger, Benjamin Lowe, Luca Ravelli, Stanislav Sojak, Zuzanna Liliental-Weber, Rebecca E. Jones, Kin M. Yu, Wladek Walukiewicz, and William J. Schaff, “Radiation-induced defects in InN and GaN studied with positron annihilation,” Phys. Status Solidi A207, No. 5, 1087–1090 (2010).
2009
  • J.W. Ager III, L. A. Reichertz, Y. Cui, Y. E. Romanyuk, D. Kreier, S.R. Leone, K.M. Yu, W.J. Schaff, and W. Walukiewicz, “Electrical properties of InGaN-Si heterojunctions,” Proceedings of the 2008 International Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland, Oct. 6-10, 2008; phys. stat. sol. (c) 6(S2), S413-S416 (2009).
  • G.F. Brown, J.W. Ager III, W. Walukiewicz, and J. Wu, “Numerical simulations of novel InGaN solar cells,” Procedings of the 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), pp. 001958-001962 (2009).
  • M. E. Hawkridge, Z. Liliental-Weber, H. J. Kim, S. Choi, D. Yoo, J.-H. Ryou and R. D. Dupuis, “Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth,” Appl. Phys. Lett. 94, 171912 (2009).
  • M. E. Hawkridge, Z. Liliental-Weber, H.J. Kim, S. Choi, D. Yoo, J.-H. Ryou, and R.D. Dupuis, “The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-Alloyed Modulated Precursor Epitaxy Determined by Transmission Electron Microscopy,” Appl. Phys. Lett. 94, 071905 (2009).
  • M. E. Hawkridge, Z. Liliental-Weber, K. M. Yu, L. A. Reichertz, W. J. Schaff, J. W. Ager, and W. Walukiewicz, “Stacking faults and phase changes in Mg-doped InGaN grown on Si,” Proceedings of the 2008 International Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland, Oct. 6-10, 2008; phys. stat. sol. (c) 6(S2), S421-S424 (2009).
  • R. E. Jones, S. X. Li, K. M. Yu, J. W. Ager III, E. E. Haller, W. Walukiewicz, H. Lu, and W. J. Schaff, “Properties of Native Point Defects in In1-xAlxN Alloys,” J. Phys. D: Appl. Phys. 42, 095406 (2009).
  • D.R. Khanal, W. Walukiewicz, J. Grandal, E. Calleja, and J. Wu, “Determining surface Fermi level pinning position of InN nanowires using electrolyte gating,” Appl. Phys. Lett. 95, 173114 (2009).
  • Z. Liliental-Weber, K.M. Yu, M. Hawkridge, S. Bedair, A.E. Berman, A. Emara, J. Domagala,and J. Bak-Misiuk, “Spontaneous stratification of InGaN layers and its influence on optical properties,” Proceedings of the 2008 International Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland, Oct. 6-10, 2008; Phys. Stat. Sol. C 6(S2), S433-S436 (2009).
  • N. Miller, J.W. Ager III, R.E. Jones, H.M. Smith III, M.A. Mayer, K.M. Yu, M.E. Hawkridge, Z. Liliental-Weber, E.E. Haller, W. Walukiewicz, W.J. Schaff, C. Gallinat, G. Koblmüller, and J.S. Speck, “Electrical and electrothermal transport in InN: The roles of defects,” Physica B 404 (23-24), 4862-65 (2009).
  • S.V. Novikov, C. R. Staddon, A. V. Akimov, R. P. Campion, N. Zainal, A. J. Kent, C. T. Foxon, C-H Chen, K. M. Yu, W. Walukiewicz, “Molecular beam epitaxy GaN layers with high As content,” J. Cryst. Growth 311, 3417–22 (2009).
  • L. A. Reichertz, I. Gherasoiu, K.M. Yu, V.M. Kao, W. Walukiewicz, and J.W. Ager III, “Demonstration of a III-Nitride/Silicon Tandem Solar Cell,” Appl. Phys. Express 2, 122202 (2009).
  • T.L. Williamson, M. A. Hoffbauer, K. M. Yu, L. A. Reichertz, M. E. Hawkridge, R. E. Jones, N. Miller, J. W. Ager III, Z. Liliental-Weber, and W. Walukiewicz, “Highly luminescent InxGa1-xN thin films grown over the entire composition range by energetic neutral atom beam lithography & epitaxy (ENABLE),” Proceedings of the 2008 International Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland, Oct. 6-10, 2008; phys. stat. sol. (c) 6, S409-S412 (2009).
  • K.M. Yu, “N-type Doping of InGaN by High Energy Particle Irradiation,” Proceedings of the 2008 International Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland, Oct. 6-10, 2008; phys. stat. sol. (a) 206(6), 1168–75 (2009).
2008
  • G.F. Brown, J.W. Ager III, W. Walukiewicz, W.J. Schaff, and J. Wu, “Probing and modulating surface electron accumulation in InN by the electrolyte gate Hall effect,” Appl. Phys. Lett. 93, 262105 (2008).
  • E. Canovas, A. Marti, A. Luque, and W. Walukiewicz, “Optimum nitride concentration in multiband III-N-V alloys for high efficiency ideal solar cells,” Appl. Phys. Lett. 93, 174109 (2008).
  • M. Hawkridge, D. Cherns, and Z. Liliental-Weber, “Electron irradiation and the equilibrium of open core dislocations in gallium nitride,” phys. stat. sol. (b) 245(5), 903-6 (2008).
  • L. Hsu and Walukiewicz, W., “Modeling of InGaN/Si tandem solar cells,” J. Appl., Phys. 104, 024507 (2008).
  • R.E. Jones, R. Broesler, K. M. Yu, J. W. Ager, III, E. E. Haller, W. Walukiewicz, X. Chen, and W. J. Schaff, “Band gap bowing parameter of In1-xAlxN,” J. Appl. Phys. 104, 123501 (2008).
  • Z. Liliental-Weber, X. Ni, and H. Morkoç, “Structural perfection of laterally overgrown GaN layers grown in polar- and non-polar directions,” J. of Materials Science: Materials in Electronics 19(8-9), 815-20 (2008).
  • Z. Liliental-Weber, R.L. Maltez, J. Xie, and H. Morkoc, “Propagation of misfit dislocations from AlN/Si interface into Si,” J. Cryst. Growth 310, 3917-23 (2008).
  • Z. Liliental-Weber, “TEM studies of GaN layers grown in non-polar direction: laterally overgrown and pendeo-epitaxial layers,” J. Cryst. Growth 310, 4011-5 (2008).
  • Z. Liliental-Weber, M. Hawkridge, J. Mangum, and O. Kryliouk, “InN nanorods and nanowires grown on different substrates,” Proc. 7th International Conference of Nitride Semiconductors (ICNS-7), Las Vegas, NV, Sep. 16-21, 2007; phys. stat. sol (c) 5(6), 1795-8 (2008).
  • L. A. Reichertz, K. M. Yu, Y. Cui, Z. Liliental-Weber, J. W. Ager, J. W. Beeman, W. Walukiewicz, W. J. Schaff, T. L. Williamson, and M. A. Hoffbauer, “InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates,” AIP Conf. Proc. 1068, 159-64 (2008).
  • J. W. Ager III, L. A. Reichertz, K. M. Yu, W. J. Schaff, T. L. Williamson, M. A. Hoffbauer, N. M. Haegel, and W. Walukiewicz, “InGaN/Si heterojunction tandem solar cells,” in Proceedings of the 33rd Photovoltaic Specialists Conference, (IEEE, 2008).
  • J. W. Ager III, N. Miller, R. E. Jones, K. M. Yu, J. Wu, W. J. Schaff, and W. Walukiewicz, “Mg-doped InN and InGaN – Photoluminescence, capacitance-voltage and thermopower measurements,” phys. stat. sol. (b) 245 (5), 873 (2008).
  • L.A. Reichertz, K.M. Yu, Y. Cui, M.E. Hawkridge, J.W. Beeman, Z. Liliental-Weber, J.W. Ager III, W. Walukiewicz, W.J. Schaff, T.L. Williamson, M.A. Hoffbauer, InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates, in Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates, edited by A. Dadgar, T. Li, M. Mastro, E.L. Piner, and J. Redwing (Mater. Res. Soc. Symp. Proc. Volume 1068, Warrendale, PA, 2008), 1068-C06-02.
  • N. Miller, R. E. Jones, J. W. Ager, K. M. Yu, P. Flanigan, J. Wu, E. E. Haller, W. Walukiewicz, T. Williamson and M. A. Hoffbauer, “Low-temperature grown compositionally graded InGaN films,” Proc. 7th International Conference of Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, September 16-21, 2007; phys. stat. sol. (c) 5(6),1866 (2008).
  • R.E. Jones, R. Broesler, K. M. Yu, J. W. Ager III, E. E. Haller, W. Walukiewicz, X. Chen and W. J. Schaff, “High Efficiency InAlIn-Based Solar Cells,” in Proceedings of the 33rdPhotovoltaics Specialists Conference , (IEEE, 2008).
  • X. Chen, K. D. Matthews, D. Hao, W. J. Schaff, L. F. Eastman, W. Walukiewicz, J. 
  • W. Ager, and Kin M. Yu, “Characterization of Mg-doped InGaN and InAlN Alloys Grown by MBE for Solar applications,” in Proceedings of the 33rd Photovoltaics Specialists Conference, (IEEE, 2008).
  • 2007
  • J. Plesiewicz, T. Suski, L. Dmowski, W. Walukiewicz, K. M. Yu, A. Korman, R. Ratajczak, A. Stonert, H. Lu, and W. Scaff, “Towards identification of localized donor states in InN,” Semicond. Sci. Technol. 22, 1161 (2007).
  • J.W. Ager III, D. Yamaguchi, L. Hsu, R.E. Jones, K. M. Yu, N. Miller, W. Walukiewicz, and W.J. Schaff, “III-nitride multijunction solar cells,” proc. of the 22nd European Photovoltaic Solar Energy Conference and Exhibition (WIP Renewable Energies, Munich, Germany, 2007) p. 215.
  • J. W. L. Yim, R. E. Jones, K. M. Yu, J. W. Ager III, W. Walukiewicz, W. J. Schaff, and J. Wu, “Effects of surface states on electrical characteristics of InN and In1-xGaxN,” Phys. Rev. B 76, 041303(R) (2007).
  • L. Hsu, R. E. Jones, S. X. Li, K. M. Yu, W. Walukiewicz, “Electron mobility in InN and III-N alloys,” J. Appl. Phys. 102, 073705 (2007).
  • R.E. Jones, H. C. M. van Genuchten, K. M. Yu, W. Walukiewicz, S. X. Li, J. W. Ager III, Z. Liliental-Weber, E.E. Haller, H. Lu, and W. J. Schaff, High
  • Electron Mobility InN by Irradiation and Thermal Annealing, Appl. Phys. Lett. 90, 162103 (2007).
  • Z. Liliental-Weber, R. E. Jones, H. C. M. von Genuchten, K. M. Yu, W. Walukiewicz, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, “TEM studies of as-grown, irradiated and annealed InN films,” Physica B 401-402, 646 (2007).
2006
  • J.W. Ager III, K.M. Yu, R.E. Jones, S.X. Li, W. Walukiewicz, E.E. Haller, H. Lu and W.J. Schaff, Electrolyte-based capacitance voltage analysis of InN, presented at the American Physical Society 2006 March Meeting, March 13-17, Baltimore, MD (2006).
  • J.W. Ager III, K.M. Yu, R.E. Jones, D. M. Yamaguchi, S.X. Li, W. Walukiewicz, E.E. Haller, H. Lu and W.J. Schaff, Evidence for p-type InN, submitted to the 28th International Conference on the Physics of Semiconductors ICPD-28, Vienna, Austria, July 24-28, 2006.
  • R. E. Jones, S. X. Li, L. Hsu, K. M. Yu, W. Walukiewicz, , Z. Liliental-Weber, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Native-defect-controlled n-type conductivity in InN, Physica B, 376-377, 436-9 (2006).
  • R.E. Jones, K.M. Yu, H.C.M. van Genuchten, W. Walukiewicz, S.X. Li, J.W. Ager III, Z. Liliental-Weber, E.E. Haller, H. Lu and W.J. Schaff, Defect Doping of InN, submitted to the 28th International Conference on the Physics of Semiconductors ICPD-28, Vienna, Austria, July 24-28, 2006.
  • R.E. Jones, H.C.M. van Genuchten, S.X. Li, L. Hsu, K.M. Yu, W. Walukiewicz, Electron Mobility of InN, presented at the American Physical Society 2006 March Meeting, March 13-17, Baltimore, MD (2006).
  • R.E. Jones, K.M. Yu, S.X. Li, W. Walukiewicz, J. W. Ager III, E.E. Haller, H. Lu, and W.J. Schaff, Effects of Mg-doping on the electrical and optical properties of InN, submitted to Mater. Res. Soc. Spring Meeting, Symp. FF: Materials and Basic Research Needs for Solar Energy Conversion, April 17-22, 2006, San Francisco, CA.
  • R.E. Jones, K. M. Yu, S.X. Li, W. Walukiewicz, J. W. Ager III, E. E. Haller, H. Lu, and W.J. Schaff, Evidence for p-type doping of InN, Phys. Rev. Lett. 96, 125505 (2006).
  • R.E. Jones, S.X. Li, L. Hsu, K.M. Yu, W. Walukiewicz, J.W. Ager III, E .E. Haller, Hai Lu and William J. Schaff, Native-defect-controlled n-type conductivity in InN, submitted to the 23rd International Conference on Defects in Semiconductors ICDS-23, July 24 - July29, 2005, Awaji Island, Hyogo, Japan., Physica B376-377, 436 (2006).
  • S. X. Li, K. M. Yu, J. Wu, W. Walukiewicz, J. W. Ager III, W. Shan, E. E. Haller, H. Lu, and W. J. Schaff, Native defects in InxGa1-xN alloys, Physica B 376-377, 432-5 (2006).
  • S. X. Li,  K.M. Yu, J. Wu, R.E. Jones, W. Walukiewicz, J.W. Ager III, W. Shan, E.E. Haller, Hai Lu, and William J. Schaff, Native Defects in In1-xGaxN  Alloys, submitted to the 23rd International Conference on Defects in Semiconductors ICDS-23, July 24 - July29, 2005, Awaji Island, Hyogo, Japan., Physica B376-377, 432 (2006).
  • S. X. Li, R. E. Jones, E. E. Haller, K. M. Yu, W. Walukiewicz, J. W. Ager III, and Z. Liliental-Weber, Hai Lu and William J. Schaff, Photoluminescent Properties of Energetic Particle-Irradiated InxGa1-xN Alloys, Appl. Phys. Lett. 88, 151101 (2006).
  • V. Pac(ebutas, G. Aleksejenko, A. Krotkus, J. W. Ager III, W. Walukiewicz, H. Lu
  • and W. J. Schaff, Optical bleaching effect in InN epitaxial layers. Appl. Phys. Lett. 88, 191109 (2006).
  • W. Walukiewicz, R.E. Jones, S.X. Li, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu and W.J. Schaff, Dopants and defects in InN and InGaN alloys, J. Crystal Growth 288, 278 (2006).
  • W Walukiewicz, J W Ager III, K M Yu, Z Liliental-Weber, J Wu, S X Li, R E Jones, and J D Denlinger, Structure and Electronic Properties of InN and In-rich Group III-Nitride Alloys, J. Physics D 39, R85 (2006).
  • Z. Liliental-Weber, D. N. Zakharov, K. M. Yu, J. W. Ager III, W. Walukiewicz, E.
  • E. Haller, H. Lu, and W. J. Schaff, Compositional modulation in InxGa1-xN, Physica B, 376-377, 468-72 (2006).
2005
  • J. W. Ager III, Z. Liliental-Weber, K. M. Yu, W. Walukiewicz, D. N. Zakharov, E. E. Haller, H. Lu, and W. J. Schaff, Axial Compositional Modulation in InGaN Films Grown by Molecular Beam Epitaxy, submitted to Appl. Phys. Lett. (2005).
  • Fei Chen, A. N. Cartwright, S. X. Li, K. M. Yu, W. Walukiewicz, Hai Lu and William J. Schaff, Effects of Proton and 4He+ Irradiation on Carrier Lifetime of InN, submitted to Appl. Phys. Lett. (2005).
  • R.E. Jones, S.X. Li, L. Hsu, K.M. Yu, W. Walukiewicz, J.W. Ager III, .E. Haller, Hai Lu and William J. Schaff, Electron Transport Properties of InN, to be pres. at the Mater. Res. Soc. Fall Meeting, Symposium FF: GaN, AlN, InN, and Related Materials, Boston, MA, November 27-December 2, 2005.
  • K. M. Yu, R.E. Jones, S.X. Li, W. Walukiewicz, J.W. Ager III, E.E. Haller, Hai Lu, and William J. Schaff, Evidence of p-type conductivity in Mg doped InN, to be pres. at the Mater. Res. Soc. Fall Meeting, Symposium FF: GaN, AlN, InN, and Related Materials, Boston, MA, November 28-December 2, 2005.
  • W. Walukiewicz, K. M. Yu, S. X. Li, R. E. Jones, J. W. Ager III, E. E. Haller, Hai Lu and William J. Schaff,  Band Structure and Properties of InN and In-rich In1-xGaxN Alloys, invited paper, E-MRS 2005 Fall Meeting, Symposium A: Indium nitride and indium rich related alloys: challenges and opportunities, Warsaw University of Technology, Poland, September 5-9, 2005.
  • S. X. Li, E.E. Haller, K. M. Yu, W. Walukiewicz, J. W. Ager III, J. Wu, W. Shan, Hai Lu and William J. Schaff, Effect of Native Defects on Optical Properties of In1-xGaxN Alloys, Appl. Phys. Lett. 87, 161905 (2005).
  • W. Walukiewicz, K. M. Yu, X. Li, J. Denlinger, L. Hsu, J. R. E. Jones, J. W. Ager III, E. E. Haller, Hai Lu and William Schaf, Narrow Energy Gap and Other Unusual Properties of InN and In-rich In1-xGaxN Alloys, pres. at the 6th international conference on nitride semiconductors, Bremen, Germany, August 28-September 2, 2005.
  • Zuzanna Liliental-Weber, Dmitri N. Zakharov, Kin M. Yu, James Wu, Sonny X. Li, Joel W. Ager III, Wladyslaw Walukiewicz, Eugene E. Haller, Hai Lu, and William J. Schaff, Compositional Ordering in InxGa1-xN: TEM and x-ray studies, J. Electron Microscopy  54(3), 243-250 (2005).
  • J. W. Ager III, W. Walukiewicz, W. Shan  K. M. Yu, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, Multiphonon Resonance Raman Scattering in InGaN, Phys. Rev. B72, 155204 (2005).
  • Z. Liliental-Weber, J. Jasinski, K. M. Yu, J. Wu, S. X. Li, J.W. Ager III, W. Walukiewicz, E.E. Haller ,H. Lu, and W. J. Schaff, Relation Between Structural and Optical Properties of InN and InxGa1-xN Thin Films, Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff, AZ, July 26-30, 2004; AIP Conference Proceedings, Vol. 772, 209-10 (2005).
  • J. W. Ager III, W. Walukiewicz, W. Shan, K. M. Yu, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, Resonance Raman Scattering in InGaN, presented at the APS 2005 March Meeting, March 21-25, 2005, Los Angeles, CA.
  • S. X. Li, K. M. Yu, R. E. Jones, J. Wu, W. Walukiewicz, J. W. Ager III, W. Shan, E. E. Haller, Hai Lu, and William J. Schaff, Fermi level stabilization energy in group III-nitrides, Phys. Rev. B71, 1612(R) (2005).
  • S. X. Li, K. M. Yu, R. E. Jones, J. Wu, W. Walukiewicz, J. W. Ager III, W. Shan, E. E. Haller, Hai Lu, and William J. Schaff, Electronic and Optical Properties of High Energy Particle-Irradiated In-rich InGaN Alloys, in Semiconductor Defect Engineering?Materials, Synthetic Structures and Devices, edited by S. Ashok, J. Chevallier, B.L. Sopori, M. Tabe, and P. Kiesel (Mater. Res. Soc. Symp. Proc. 864, Warrendale, PA, 2005) Vol. 864, E7.10.
  • Jonathan Denlinger, S. X Li, R. E Jones, K.M. Yu, J.Wu, J. W. Ager III, W. Walukiewicz, E. E. Haller, Hai Lu, William J. Schaff, X-ray Spectroscopy of InN heavily irradiated with He, submitted to the Mater. Res. Soc. Spring Meeting, Symposium E: Semiconductor Defect Engineering-Materials, Synthetic Structures, and Devices, San Francisco, CA, March 28-April 1, 2005.
  • K. M. Yu, Z. Liliental-Weber, W. Walukiewicz, S. X. Li, R. E. Jones, W. Shan, J. W. Ager III, E. E. Haller, Hai Lu, and William J. Schaff, On the Crystalline Structure, Stoichiometry and Band Gap of InN Thin Films, Appl. Phys. Lett., 86, 071910 (2005).
2004
  • William J. Schaff, Hai Lu, Lester F. Eastman, Wladek Walukiewicz, Kin Man Yu, Stacia Keller, Sarah Kurtz, Brian Keyes, Lynn Gevilas, Electrical Properties of InN Grown by Molecular Beam Epitaxy, pres. at NAMBE 2004 - 22nd North American MBE conference ? Banff, Alberta, Canada, Oct. 10-14, 2004.
  • J. W. Ager III, J. Wu, K. M. Yu, R. E. Jones, S. X. Li, W. Walukiewicz, E. E. Haller, Hai Lu, and William J. Schaff, Group III-Nitride Alloys as Photovoltaic Materials, 49th SPIE Annual Meeting, Denver, Colorado, 2-6 August 2004.
  • W. Walukiewicz, J. Wu, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu,and William J. Schaff, Group III-nitride alloys as solar cell materials, Proc. of the 19th European Photovoltaic Solar Energy Conference, Paris, France, June 7-11, 2004 (WIP-Munich and ETA-Fluence, 2004) vol. I, p. 30.
  • W. Walukiewicz, S. X. Li, J. Wu, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, and William J. Schaff, Optical Properties and Electronic Structure of InN and In-rich Group III-Nitride Alloys, Journal of Crystal Growth 269, 119-127 (2004). 
2003
  • J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, S.X. Li, E.E. Haller, Hai Lu, William J. Schaff, Universal bandgap bowing in group-III nitride alloys, Solid State Commun. 127, 411?414 (2003).
  • J. Wu, W. Walukiewicz, W. Shan, K.M. Yu, J.W. Ager III, S. X. Li, E.E. Haller, Hai Lu, and William J. Schaff, Temperature Dependence of the Fundamental Bandgap of InN, J. Appl. Phys. 94, 4457 (2003).
  • J. Wu, W. Walukiewicz, W. Shan, K.M. Yu, J.W. Ager III, S. X. Li, E.E. Haller, Hai Lu, and William J. Schaff, "Universal Bandgap Bowing in Group III Nitride Alloys," Solid State Com. 127, 411 (2003).
  • J. Wu, W. Walukiewicz, K.M. Yu, W. Shan, J.W. Ager III, E.E. Haller, Hai Lu, and William J. Schaff, W. K. Metzger, Sarah R. Kurtz, and J. F. Geisz, Superior Radiation Resistance of In1-xGaxN Alloys: a Full-Solar-Spectrum Photovoltaic Material System, J. Appl. Phys. 94, 6477 (2003).
  • J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, Hai Lu, and William J. Schaff, Narrow Band Gap Group III-Nitride Alloys, pres at the 5th international conference on Nitride Semiconductors (ICNS-5), May 25-30, 2003, Nara, Japan, phys. stat. sol. (b) 240, No. 2, 412? 416 (2003)
  • J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, I. Miotkowski, A.K. Ramdas, Ching-Hua Su, I. K. Sou, R. Perera, and J. Denlinger, Origin of the Large Bandgap Bowing in Highly Mismatched Semiconductor Alloys, Phys. Rev. B67, 035207 (2003).
2002
  • J. Wu, W. Walukiewicz, W. Shan, K.M. Yu, J.W. Ager III, E. E. Haller, Hai Lu and William J. Schaff, Effects of Narrow Band Gap on the Properties of InN, Phys. Rev. B66, 201403 (2002).
  • J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III and E.E. Haller, Hai Lu and William J. Schaff,Composition Dependence of the Fundamental Band Gaps of Group III-Nitride Alloys, pres. at the Mater. Res. Soc. Fall Meeting, Symposium: L, December 2-6, 2002, Boston, Massachusetts.
  • J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu and William J. Schaff, Indium Nitride: a Narrow Gap Semiconductor, Physics of Semiconductors 2002: Proceedings of the 26th International Conference on the Physics of Semiconductors (Institute of Physics, Bristol, 2002) G1.7.
  • J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu and William J. Schaff, Small bandgap bowing in In1-xGaxN alloys, Appl. Phys. Lett. 80, 4741 (2002).
  • J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, William J. Schaff, and Y. Nanishi, Unusual properties of the fundamental band gap of InN, Appl. Phys. Lett. 80, 3967 (2002).

Highly Mismatched Alloys

2014
  • R. Kudrawiec, A. Luce, M. Gladysiewicz, Y. J. Kuang (邝彦瑾), K.-M. Yu, C.W. Tu, and W. Walukiewicz, “Electronic Band Structure of GaNxPyAs1-y-x Highly Mismatched Alloys: Suitability for Intermediate Band Solar Cells,” Phys. Rev. Applied 1, 034007 (2014).
  • H. Jussila, K. M. Yu, J. Kujala, F. Tuomisto, S. Nagarajan, J. Lemettinen, T. Huhtio, T.O. Tuomi, H. Lipsanen, and M. Sopanen, “Substitutionality of nitrogen atom and formation of nitrogen complexes and point defects in GaPN,” J. Phys. D: Appl. Phys. 47, 075106 (2014).
  • Tooru Tanaka, Masaki Miyabara, Yasuhiro Nagao, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, Wladek Walukiewicz, “Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells,” IEEE J. Photovoltaics 4 (1), 196 (2014).
  • S. V. Novikov, M. Ting, K. M. Yu, W. L. Sarney, R. W. Martin, S. P. Svensson, W. Walukiewicz and C. T. Foxon, “Tellurium n-type doping of highly mismatched amorphous GaNAs alloys by plasma-assisted molecular beam epitaxy,” J. Cryst. Growth, in press, 2014.
  • M. K. Rajpalke, W. M. Linhart, M. Birkett, K. M. Yu, J. Alaria, T. S. Jones, M. J. Ashwin, and T. D. Veal, “High Bi content GaSbBi alloys,” J. Appl. Phys., in press (2014).
  • M. P. Polak, P. Scharoch, R. Kudrawiec, J. Kopaczek, M. J. Winiarski, W. M. Linhart, M. K. Rajpalke, K. M. Yu, T. S. Jones, M. J. Ashwin, and T. D. Veal, “Theoretical and experimental studies of electronic band structure for GaSb1-xBix in the dilute Bi regime,” J. Phys. D, in press (2014).
2013
  • E. Bakir Kandemir and B. Gonui, G.T. Barkema, K. M. Yu, W. Walukiewicz and L. W. Wang, “Modeling of the Atomic Structure and Electronic Properties of Amorphous GaN1-xAsx,” Computational Materials Science 82, 100 (2013).
  • J. Kopaczek, R. Kudrawiec,  W. M. Linhart, M. K. Rajpalke, K. M. Yu, T. S. Jones, M. J. Ashwin, J. Misiewicz, and T. D. Veal, “Photoreflectance of the temperature dependence of the band gap of GaSb1-xBix alloys with 0<x£0.042,” Appl. Phys Lett. 103, 261907 (2013).
  • M. K. Rajpalke, W. M. Linhart, M. Birkett, K. M. Yu, D. O. Scanlon, J. Buckeridge, T. S. Jones, M. J. Ashwin, and T. D. Veal, “Growth and properties of GaSbBi alloys,” Appl. Phys. Lett. 103, 142106 (2013).
  • W.L. Sarney, S.P. Svensson, S.V. Novikov, K.M. Yu, W. Walukiewicz, C.T. Foxon, “GaN1-xSbx Highly Mismatched Alloys grown by Low Temperature Molecular Beam Epitaxy under Ga-rich Conditions,” J. Cryst. Growth 383, 95 (2013).
  • K. M. Yu, W.L. Sarney, S. V. Novikov, D. Detert, R. Zhao, J. Denlinger, S.P. Svensson, O. D. Dubon, W.Walukiewicz, and C. T. Foxon, “Highly Mismatched N-rich GaN1-xSbx films grown by Low Temperature Molecular Beam Epitaxy,” Appl. Phys. Lett. 102, 102104 (2013).
  • E. Bakir Kandemir and B. Gonui, G.T. Barkema, K. M. Yu, W. Walukiewicz and L. W. Wang, “Modeling of the Atomic Structure and Electronic Properties of Amorphous GaN1-xAsx,” Computational Materials Science 82, 100 (2013).
  • Z. Liliental-Weber, R. dos Reis, S. V. Novikov, K. M. Yu, A. X. Levander, O. D. Dubon, J. Wu, W. Walukiewicz1, and C. T. Foxon, “Microstructure of Mg doped GaNAs alloys,” Phys. Status Solidi C 10, No. 3, 453–456 (2013).
  • Z. Liliental-Weber, R. dos Reis, A. X. Levander, K. M. Yu, W.Walukiewicz, S. V. Novikov,and C. T. Foxon, “Microstructure of GaN1-xBix,” J. Electron. Mater., 42, 26 (2013).
  • Tooru Tanaka, Yasuhiro Nagao, Tomohiro Mochinaga, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, Wladek Walukiewicz, “Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells,” submitted to J. Cryst. Growth 378, 259 (2013).
  • Y. J. Kuang (邝彦瑾), K. M. Yu, R. Kudrawiec, A. V. Luce, M. Ding, W. Walukiewicz, and C. W. Tu, “GaNAsP: an intermediate band semiconductor grown by gas-source molecular beam epitaxy,” Appl. Phys. Lett. 102 112105 (2013).
  • Tooru Tanaka, Masaki Miyabara, Yasuhiro Nagao, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz, “Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells,” submitted to Appl. Phys. Lett. 102, 052111 (2013).
  • Nazmul Ahsan, Naoya Miyashita, Muhammad M. Islam, Kin Man Yu, Wladek Walukiewicz, and Yoshitaka Okada, “Effect of Sb on GaNAs Intermediate Band Solar Cells,” IEEE J. Photovoltaics, 3(2), 730 (2013).
  • A. X. Levander, K. M. Yu, S. V. Novikov, Z. Liliental-Weber, C. T. Foxon, O. D. Dubon, J. Wu, and W.Walukiewicz, “Local Structure of Amorphous GaN1-xAsx Semiconductor Alloys Across  the Composition Range,”  J. Appl. Phys., 113, 243505 (2013).
  • S. V. Novikov,  K. M.Yu, A. Levander,  D. Detert, W. L.Sarney, Z. Liliental-Weber, M. Shaw, R.W. Martin, S. P.Svensson,  W. Walukiewicz, C. T. Foxon, “Molecular beam epitaxy of highly mismatched N-rich GaN 1-xSb x and InN 1-xAs x alloys,” J. Vac. Sci. Technol. B31, 03C102 (2013).

2012
  • Marie A. Mayer, Kin Man Yu, Eugene E. Haller, Wladek Walukiewicz, “Tuning structural, electrical and optical properties of oxide alloys: ZnO1-xSex,” J. Appl. Phys. 111, 113505 (2012).
  • Marie A. Mayer, Derrick T. Speaks, Jonathan D. Denlinger, Lothar Reichertz, Jeff Beeman, Kin Man Yu, Eugene E. Haller, and Wladek Walukiewicz, “ZnO1-xSex as a photoelectrochemical anodic absorber,” J. Phys. Chem. C116, 15281 (2012).
  • Z. Liliental-Weber, R. dos Reis, A. X. Levander, K. M. Yu, W.Walukiewicz, S. V. Novikov,and C. T. Foxon, “Microstructure of GaN1-xBix,” J. Electron. Mater., 42, 26 (2013).
  • N. Ahsan, N. Miyashita, M. M. Islam, K. M. Yu, W. Walukiewicz, and Y. Okada, “Two-Photon Excitation in an Intermediate Band Solar Cell Structure,” Appl. Phys. Lett. 100, 172111 (2012).
  • A. Bhatia, W. M. Hlaingoo, G. Siegel, P.R. Stone, K.M. Yu, and M.A. Scarpulla, “Synthesis of Ge1-xSnx Alloy Thin Films Using Ion Implantation and Pulsed Laser Melting (II-PLM),” J. Electron Mater. DOI: 10.1007/s11664-012-2011-z, (2012).
  • Hari P. Nair, Adam M. Crook, Kin Man Yu, and Seth R. Bank, “Structural and Optical Studies of Nitrogen Incorporation into GaSb-Based InGaSb Quantum Wells,” Appl. Phys. Lett. 100, 021103 (2012).
  • S. V. Novikov, K. M. Yu, A. X. Levander, Z. Liliental-Weber, R. dos Reis, A. J. Kent, A. Tseng, O. D. Dubon, J. Wu, J. Denlinger, W. Walukiewicz, F. Luckert, P. R. Edwards, R. W. Martin, and C. T. Foxon, “Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content,” Phys. Status Solidi A, 209 (3), 419–423 (2012).
  • Z. Liliental-Weber, R. dos Reis, A. X. Levander, K. M. Yu, W. Walukiewicz, S. V. Novikov, and C. T. Foxon,  “GaN1-x Asx and GaN1-x Bix Alloys for Solar Cell Application; Structural Studies”, Phys. Stat. Sol (c) 1-4 (2012); DOI 10.1002/pss 201100582. (SIMC 2011).
  • Z. Liliental-Weber, R. dos Reis, A. Levander, K.M. Yu, W. Walukiewicz, S.V. Novikov, and C.T. Foxon, “Structural Studies of GaN1-xAsx and GaN1-xBix Alloys for Solar Cell Application,” Phys. Stat. Sol. C9 (7), 1586-9 (2012).
2011
  • Tooru Tanaka, Shuhei Kusaba, Tomohiro Mochinaga, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz, “Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe1-xOx alloys,” Appl. Phys. Lett. 100, 011905 (2011).
  • A. X. Levander, S. V. Novikov, Z. Liliental-Weber, R. dos Reis, J. D. Denlinger, J. Wu, O. D. Dubon, C. T. Foxon, K. M. Yu, and W.Walukiewicz, “Growth and Transport Properties of p-type GaNBi Alloys,” Invited feature article, J. Mater. Res. 14, pp 2887-2894 (2011).
  • A. X. Levander, S. V. Novikov, Z. Liliental-Weber, R. dos Reis, O. D. Dubon, J. Wu, C. T. Foxon, K. M. Yu, and W.Walukiewicz, “Doping of GaN1-xAsx with High As content,” J. Appl. Phys. 110, 093702 (2011).
  • T. Tanaka, K. M. Yu, A. X. Levander, O. D. Dubon, L. A. Reichertz, N. Lopez, M. Nishio, W. Walukiewicz, “Demonstration of ZnTe1-xOx intermediate band solar cell,” Jpn. J. Appl. Phys. 50, 082304 (2011).
  • K. M. Yu, S. V. Novikov, R. Broesler, A. Levander , Z. Liliental-Weber, F. Luckert, R. W. Martin, O. Dubon, J. Wu, W. Walukiewicz, and C. T. Foxon, “GaNAs Alloys Over the Whole Composition Range Grown on Crystalline and Amorphous Substrates,” Phys. Status Solidi C 8, No. 7–8, 2503–2505 (2011).
  • S. V. Novikov, C. R. Staddon, C. T. Foxon, K. M. Yu, R. Broesler, M. Hawkridge, Z. Liliental-Weber, J. Denlinger, I. Demchenko, F. Luckert, P. R. Edwards, R. W. Martin and W. Walukiewicz, “Growth by Molecular Beam Epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4eV to 0.8eV for solar energy conversion devices,” J. of Cryst. Growth 323, 60–63 (2011).
  • A. X. Levander, R. Broesler, Z. Liliental-Weber, S. V. Novikov, C. T. Foxon, O. D. Dubon, J. Wu, W.Walukiewicz, and K. M. Yu, “Thermal Stability of Amorphous GaN1-xAsx Alloys,” Appl. Phys. Lett. 98, 61902 (2011).
  • N. López, L. A. Reichertz, K. M. Yu, K. Campman, and W. Walukiewicz, Engineering the Electronic Band Structure for Multiband Solar Cells, Phys. Rev. Lett. 106, 028701 (2011).
2010
2009
  • K.M. Yu, S.V. Novikov, R. Broesler, I.N. Demchenko, J.D. Denlinger, Z. Liliental-Weber, F. Luckert, R.W. Martin, W. Walukiewicz, and C.T. Foxon, “Highly mismatched crystalline and amorphouse GaN1-xAsx alloys in the whole composition range,” J. Appl. Phys. 106, 103709 (2009).
  • S. V. Novikov, C. R. Staddon, A. V. Akimov, R. P. Campion, N. Zainal, A. J. Kent, C. T. Foxon, C-H Chen, K. M. Yu, W. Walukiewicz, “Molecular beam epitaxy GaN layers with high As content,” J. Cryst. Growth 311, 3417–3422 (2009).
  • C.-H. Chen, K.M. Yu, and W. Walukiewicz, “Optical properties of ion beam synthesized nitrogen-rich GaN1-xAs,” Proceedings of the 2008 International Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland, Oct. 6-10, 2008; phys. stat. sol (c)6(S2), S796-S799 (2009).
  • X. Chen, K.D. Matthews, D. Hao, W.J. Schaff, L.F. Eastman, W. Walukiewicz, J.W. Ager, and K.M. Yu, “MBE Growth and Characterization of Mg-doped III-Nitrides on Sapphire,” Intl. J. High Speed Electronics & Systems 19(1), 113-9 (2009).
2008
  • K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, J. A. Gupta, and J. –M. Baribeau, “Composition dependence of the hole mobility in GaSbxAs1-x,” Appl. Phys. Lett. 92, 162105 (2008).
  • K. Alberi, K. M. Yu, P.R. Stone, O.D. Dubon, W. Walukiewicz, X. Liu, and J. K. Furdyna, “The formation of a Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing,” Phys. Rev. B78, 075201 (2008).
  • K. Alberi, J. Blacksberg, L. D. Bell, S. Nikzad, K. M. Yu, O. D. Dubon, and W. Walukiewicz, “Band anticrossing in highly mismatched SnxGe1-x semiconducting alloys,” Phys. Rev. B 77, 073202 (2008).
  • K. M. Yu, M. A. Scarpulla, W. Shan, J. Wu, J. W. Beeman, J. B. Jasinski, Z. Liliental-Weber, O. D. Dubon, and W. Walukiewicz, “Energetic Beam Synthesis of Dilute Nitrides and Related Alloys,” in Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology, edited by Ayse Erol (Springer-Verlag Berlin-Heidelberg 2008) Chapter 1
  • W. Walukiewicz, K. Alberi, J. Wu, W. Shan, K.M. Yu, and J. W. Ager III, “Electronic Band Structure of Highly Mismatched Semiconductor Alloys,” in Physics Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology, edited by Ayse Erol (Springer-Verlag Berlin-Heidelberg 2008) Chapter 3.
  • W. Walukiewicz, K. Alberi, J. Wu, K. M. Yu, and J. W. Ager III, “Electronic Structure of Highly Mismatched Semiconductor Alloys,” in Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology, ed. A. Erol (Springer, Berlin, 2008) pp. 65-90.
2007
  • K. Alberi, J. Wu, W. Walukiewicz, K.M. Yu, O.D. Dubon, S.P. Watkins, C.X. Wang, X. Liu, Y.-J. Cho, J. Furdyna, Valence Band Anticrossing in Highly Mismatched Alloys, presented at the International Symposium on Compound Semiconductors, August 13-17, 2006, Vancouver, Canada; proceedings in Phys. Stat. Sol. C, 4, 1711 (2007)
  • K. Alberi, J. Wu, W. Walukiewicz, K.M. Yu, O.D. Dubon, S.P. Watkins, C.X. Wang, X. Liu, Y.-J. Cho, J. Furdyna, Valence Band Anticrossing in Highly Mismatched Alloys, presented at the International Symposium on Compound Semiconductors, August 13-17, 2006, Vancouver, Canada; proceedings in Phys. Stat. Sol. C, 4, 1711 (2007)
  • K. Alberi, J. Wu, W. Walukiewicz, K.M. Yu, O.D. Dubon, S.P. Watkins, C.X. Wang, X. Liu, Y.-J. Cho, J. Furdyna, Phys. Rev. B, 75, 045203 (2007)
  • K. Alberi, W. Walukiewicz, K. M. Yu, O. D. Dubon, K. Bertulis, A. Krotkus, “Valence Band Anticrossing in GaBixAs1-x,” Appl. Phys. Lett., 91, 051909 (2007).
  • K. Alberi, W. Walukiewicz, K.M. Yu, O.D. Dubon, K. Bertulis, A. Krotkus, Valence Band Anticrossing in GaBiAs, presented at the 2007 APS March Meeting, March 5-7, 2007, Denver, CO, USA
  • K. Alberi, W. Walukiewicz, K.M. Yu, O.D. Dubon, K. Bertulis, A. Krotkus, Appl. Phys. Lett., 91, 119731 (2007)
  • K. M. Yu, M. A. Scarpulla, R. Farshchi, O. D. Dubon, and W. Walukiewicz, “Synthesis of highly mismatched alloys using ion implantation and pulsed laser annealing,” Nucl. Instrum. Methods B 261, 1150 (2007).
  • K. M. Yu, K. Alberi, W. Walukiewicz, J. W. Ager, J. W. Beeman, N. Miller, J. Wu, O. D. Dubon, and P. Becla, “Applications of highly mismatched alloys to high efficiency intermediate band and multijunction solar cells,” plenary presentation, proc. of the 22nd European Photovoltaic Solar Energy Conference and Exhibition (WIP Renewable Energies, Munich, Germany, 2007) p. 5.
  • V. Pacebutas, K. Bertulis, L. Dapkus, G. Aleksejenko, A. Krotkus, K. M. Yu, and W. Walukiewicz, “Characterization of low-temperature molecular-beam-epitaxy grown GaBiAs layers,” Semicond. Sci. Technol. 22, 819 (2007).
2006
  • K. M. Yu, M. A. Scarpulla , R. Farshchi, O. D. Dubon, and W. Walukiewicz, Energetic beam synthesis of Highly Mismatched Alloys, invited talk, 19th International Conference on the Application of Accelerators in Research and Industry-CAARI 2006, Fort Worth, Texas, August 20 - 25, 2006.
  • K. M. Yu, W. Walukiewicz, R. Farshchi, O. D. Dubon, J.W. Ager III, I. D. Sharp, and E. E. Haller, Synthesis and Optical Properties of Multiband III-V Semiconductor Alloys, submitted to the 28th International Conference on the Physics of Semiconductors ICPD-28, Vienna, Austria, July 24-28, 2006.
  • K. M. Yu, W. Walukiewicz, J.W. Ager III, D. Bour, R. Farshchi, O. D. Dubon, I. D. Sharp, and E. E. Haller, GaNxAs1-x-yPy Quaternary Alloys: a III-V Multiband System for High Efficiency Intermediate Band Solar Cells, submitted to Mater. Res. Soc. Spring Meeting, Symp. FF: Materials and Basic Research Needs for Solar Energy Conversion, April 17-22, 2006, San Francisco, CA.
  • W. Shan, W. Walukiewicz, K.M. Yu, J. Wu, J.W. Ager III, and E.E. Haller, New Development in Dilute Nitride Materials Resaerch, in III-Nitride Semiconductor Materials, edited by Zhe Chuan Feng (World Scientific, Singapore, 2006). Chapter 12.
  • K. M. Yu, W. Walukiewicz, J.W. Ager III, D. Bour, R. Farshchi, O. D. Dubon, S. X. Li, I. D. Sharp, and E. E. Haller, Multiband GaNAsP Quaternary Alloys, Appl. Phys. Lett. 88, 092110 (2006).
2005
  • K. Alberi, A. Minor, S.J. Chung, D.E. Mars, W. Shan, F. Zavaliche, R. Ramesh, K.M. Yu, W. Walukiewicz, and O.D. Dubon, Planar modulation of the conduction band edge in GaNxAs1-x, presented at the 6th International Conference on Nitride Semiconductors, August 28 ? September 2, 2005, Bremen, Germany
  • K. Alberi, A.M. Minor, S.J. Chung, D.E. Mars, K.M. Yu, W. Walukiewicz, and O.D. Dubon, GaNxAs1-x Quantum Structures Fabricated by FIB Patterning, submitted to Microscopy & Microanalysis 2005, Hawaii Convention Center, Honolulu, Hawaii, USA, July 31-August 4, 2005.
  • K. M. Alberi, A. Minor, M.A. Scarpulla, S. Chung, D. E. Mars, K. M. Yu, W. Walukiewicz, and O. D. Dubon, Fabrication of GaNxAs1-x Quantum Structures by a Focused Ion Beam, Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff, AZ, July 26-30, 2004; AIP Conference Proceedings, Vol. 772, 223-4 (2005).
  • K. Alberi, A. Minor, S.J. Chung, D.E. Mars, W. Shan, F. Zavaliche, R. Ramesh, K.M. Yu, W. Walukiewicz, and O.D. Dubon, Planar modulation of the conduction band edge in GaNxAs1-x, presented at the APS 2005 March Meeting, March 21-25, 2005, Los Angeles, CA.
  • W. Walukiewicz, W. Shan, K.M. Yu, J.W. Ager III, and Y. Nabetani, Energetic Position of Oxygen Resonant States in ZnSe, presented at the APS 2005 March Meeting, March 21-25, 2005, Los Angeles, CA.
  • J. W. Ager, W. Walukiewicz, K. M. Yu, W. Shan, J. D. Denlinger, and J. Wu, Group III-Nitride Materials for High Efficiency Photoelectrochemical Cells, submitted to Mater. Res. Soc. Spring Meeting, San Francisco, CA, March 28-April 1, 2005, in Materials and Technology for Hydrogen Storage and Generation, edited by G-A. Nazri, C. Ping, R.C. Young, M. Nazri, and J. Wang (Mater. Res. Soc. Symp. Proc. 884E, Warrendale, PA, 2005), GG6.6.
  • K. M. Yu, W. Walukiewicz, J. Wu, D. E. Mars, M. A. Scarpulla, and O. D. Dubon, Mutual Passivation in Dilute GaNxAs1-x Alloys, invited paper, Mater. Res. Soc. Spring Meeting, San Francisco, CA, March 28-April 1, 2005. in Semiconductor Defect Engineering?Materials, Synthetic Structures and Devices, edited by S. Ashok, J. Chevallier, B.L. Sopori, M. Tabe, and P. Kiesel (Mater. Res. Soc. Symp. Proc. 864, Warrendale, PA, 2005) Vol. 864, E8.1
  • W. Walukiewicz, K. M. Yu, J Wu, J. W. Ager III, W. Shan, M. A. Scarpulla, O. D. Dubon, Highly Mismatched Alloys for Intermediate Band Solar Cells, submitted to Mater. Res. Soc. Spring Meeting, Symposium F: Thin-Film Compound Semiconductor Photovoltaics, San Francisco, CA, March 28-April 1, 2005.
  • W. Walukiewicz, W. Shan, J. Wu, K. M. Yu, and J. W. Ager III, Band Anticrossing and Related Electronic Structure in III-N-V Alloys, in Dilute Nitride Semiconductors, edited by M. Henini (Elsevier, Oxford, UK, 2005) Chapter 10, p. 325-392.
2004
  • W. Walukiewicz, W. Shan, J. Wu, and K. M. Yu, Band Anticrossing in III-N-V Alloys: Theory and Experiments, in Physics and Applications of Dilute Nitrides, edited by Irina Buyanova and Weimin Chen (Taylor & Francis, New York, 2004) Chapter 2, p. 23-64. 
  • J. Wu, W. Walukiewicz, K. M. Yu, J. D. Denlinger, W. Shan, J. W. Ager III, E. E. Haller, and T. F. Kuech; Valence Band Hybridization in N-rich GaN1-xAsx Alloys, Phys. Rev. B 70, 115214 (2004).
  • K. M. Yu, W. Walukiewicz, M. A. Scarpulla, O. D. Dubon, W. Shan, J. Wu, J. W. Beeman, and P. Becla, Multi-Band Diluted II-VI Oxide Semiconductors, pres. at the 27th International Conference on the Physics of Semiconductors, July 26-30, 2004, Flagstaff, Arizona.
  • J. Wu, K. M. Yu and W. Walukiewicz, Mutual Passivation Effects in Highly Mismatched Group III-V-N Alloys, pres. at E-MRS 2004 SPRING MEETING, Symposium M: Dilute nitride and related mismatched semiconductor alloys, Palais de la Musique et des Congres, Strasbourg, France, May 24-28, 2004. IEE Proceedings-Optoelectronics 151 (5): 460-464, Oct 2004 (IEE-Inst. Elec. Emg., Michael Faraday House, Six Hills Way, Stevenage, Hertford, SG1 2AY, ENGLAND).
  • K. M. Yu, W. Walukiewicz, M. A. Scarpulla, O. D. Dubon, W. Shan, J. Wu, J. W. Beeman, and P. Becla, Synthesis and Properties of Highly Mismatched II-O-VI Alloys, invited paper, pres. at E-MRS 2004 SPRING MEETING, Symposium M: Dilute nitride and related mismatched semiconductor alloys, Palais de la Musique et des Congres, Strasbourg, France, May 24-28, 2004. IEE Proceedings-Optoelectronics 151 (5): 452-459, Oct. 2004 (IEE-Inst. Elec. Emg., Michael Faraday House, Six Hills Way, Stevenage, Hertford, SG1 2AY, ENGLAND).
  • W. Shan, W. Walukiewicz, K. M. Yu, M. A. Scarpulla, O. D. Dubon, J. W. Beeman, J. W. Ager III, J. Wu, E. E. Haller, and Y. Nabetani, Effect of oxygen on the band structure in II-O-VI alloys, pres. at Photonics West, San Jose, California, January 24?29 2004.
  • K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, M. A. Scarpulla, O. D. Dubon, J. W. Beeman, and P. Becla, Multi-Band Diluted II-VI Oxide for High Efficiency Solar Cells, Proc. of the 19th European Photovoltaic Solar Energy Conference, Paris, France, June 7-11, 2004 (WIP-Munich and ETA-Fluence, 2004) vol. I, p. 69.
  • W. Shan, K. M. Yu, W. Walukiewicz, J. Wu, J.W. Ager III, and E.E. Haller, Band Anticrossing in Dilute Nitrides, J. Phys. 16, S3355 (2004).
  • K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, and J. W. Beeman, M. A. Scarpulla, O. D. Dubon, and P. Becla, Synthesis and Optical Properties of II-O-VI Highly Mismatched Alloys, J. Appl. Phys.95, 6232 (2004).
  • K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, M. A. Scarpulla, O. D. Dubon, J. W. Beeman, and P. Becla, Diluted ZnMnTe Oxide: A Multi-Band Semiconductor for High Efficiency Solar Cells pres. at the 11th International Conference on II-VI Compounds, Sept. 22-26, 2003, Niagara Falls, New York, , Phys. Stat. Sol. (b) 241, 660?663 (2004).
  • W. Shan, W. Walukiewicz, J.W. Ager III, K. M. Yu, J. Wu, E. E. Haller, and Y. Nabetani, Oxygen Induced Band-gap Reduction in ZnOxSe1-x Alloys, pres. at the 11th International Conference on II-VI Compounds, Sept. 22-26, 2003, Niagara Falls, New York, Phys. Stat. Sol. (b) 241, 603?606 (2004).
  • W. Shan, K. M. Yu, W. Walukiewicz, J. Wu, J. W. Beeman, and J.W. Ager III, M.A. Scarpulla, O.D. Dubon, and E. E. Haller, Effects of Pressure on the Band Structure of Highly Mismatched Zn1-yMnyOxTe1-x Alloy, Appl. Phys. Lett. 84, 924 (2004).
2003
  • K. M. Yu , J. Wu, W. Walukiewicz, W. Shan, J. Beeman, D. E. Mars, D. R Chamberlin, M. A. Scarpulla, O. D. Dubon, J. F. Geisz, and M. C. Ridgway,  Mutual Passivation of Group IV Donors and Isovalent Nitrogen in Diluted GaNxAs1-x Alloys, pres at the 22nd International Conference on Defects in Semiconductors (ICDS-22), July 28-August 1, 2003, Aarhus, Denmark, Physica B 340?342, 389 (2003).
  • K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, and J. W. Beeman, M. A. Scarpulla, O. D. Dubon, and P. Becla, Diluted II-VI Oxide Semiconductors with Multiple Band Gaps, Phys. Rev. Lett. 91, 246203 (2003).
  • J. Wu, K. M. Yu, W. Walukiewicz, G. He, E. E. Haller, D. E. Mars, D. R Chamberlin, Mutual Passivation Effects in Si-doped Dilute InyGa1-yAs1-xNx Alloys, Phys. Rev. B 68, 195202 (2003).
  • J. Wu, W. Walukiewicz, K. M. Yu, W. Shan, J. W. Ager III, E. E. Haller, I. Miotkowski, A.K. Ramdas and Ching-Hua Su, Composition Dependence of the Hydrostatic Pressure Coefficients of the Bandgap of ZnSe1-xTex Alloys, Phys. Rev. B68, 033206 (2003).
  • K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, J. Beeman, M. A. Scarpulla, O. D. Dubon, M. C. Ridgway, D. E. Mars, and D. R Chamberlin, Mutual Passivation of Group IV Donors and Nitrogen in Diluted GaNxAs1-x Alloys, Appl. Phys. Lett. 83, 2844 (2003).
  • W. Shan, W. Walukiewicz, J.W. Ager III, K. M. Yu, J. Wu, E. E. Haller, Y. Nabetani, T. Mukawa, Y. Ito, and T. Matsumoto, Effect of Oxygen on the Electronic Band Structure in ZnOxSe1-x Alloys, Appl. Phys. Lett. 83, 299 (2003).
  • Liliental-Weber, J. Wu, J. W. Beeman, M. R. Pillai, and M. J. Aziz, Synthesis of GaNxAs1-x Thin Films by Pulsed Laser Melting and Rapid Thermal Annealing (PLM-RTA) of N+-implanted GaAs, J. Appl. Phys. 94, 1043 (2003).
  • K. M. Yu, J. Wu, W. Walukiewicz, D. E. Mars, D. R Chamberlin, M. A. Scarpulla, O. D. Dubon, and J. F. Geisz, Mutual Passivation of Si and N in Diluted GaNxAs1-x Alloys, pres. at American Phys. Society March Meeting, Austin, TX, March 3-7, 2003.
  • W. Shan, W. Walukiewicz, J. Wu, K. M. Yu, J.W. Ager III, S.X. Li and E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and Sarah R. Kurtz, Band Gap Bowing Effects in BxGa1-xAs Alloys, J. Appl. Phys. 93, 2696 (2003).
  • J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, I. Miotkowski, A.K. Ramdas, Ching-Hua Su, I. K. Sou, R. Perera, and J. Denlinger, Origin of the Large Bandgap Bowing in Highly Mismatched Semiconductor Alloys, Phys. Rev. B67, 035207 (2003).
2002
  • K. M. Yu, W. Walukiewicz, J. Wu, D. Mars, D. R Chamberlin M. A. Scarpulla, O. D. Dubon, and J. F. Geisz, , Mutual Passivation of Electrically Active and Isovalent Impurities, Nature Materials 1, 185 (2002); Advance online publication, 20 October 2002 (doi:10.1038/nmat754).
  • J. Blinowski, P. Kacman, K. M. Yu, W. Walukiewicz, T. Wojtowicz, and J.K. Furdyna, Effect of Interstitial Mn on the Magnetic Properties of GaMnAs, Proceedings of the 15th International Conference on High Magnetic Fields in Semiconductor Physics, to be published by IOP (2002).
  • J. Blinowski, P. Kacman, K. M. Yu, W. Walukiewicz, T. Wojtowicz, J. K. Furdyna, Effect of Interstitial Mn on the Magnetic Properties of GaMnAs, Proc. XXXI Int. School on the Phys. of Semicond. Comp. , Jaszowiec p. 33 (2002).
  • Kin Man Yu, J Wu, W. Walukiewicz, J. W. Beeman, J. W. Ager, E. E. Haller, I. Miotkowski, and A. Ramdas, " Band Anticrossing in Highly Mismatched Group II-VI Semiconductor Alloys," J. Electron. Mater. 31, 754 (2002).
  • K. M. Yu, Ion Beam Synthesis and n-type Doping of Group III-Nx-V1-x Alloys, Semicond. Sci. Technol. 17, 785 (2002).
  • K. M. Yu, W. Walukiewicz, J. W. Beeman, M. A. Scarpulla, O. Dubon, M. R. Pillai, and M. Aziz, Enhanced Nitrogen Incorporation by Pulsed Laser Annealing of GaNxAs1-x Formed byN Implantation, Appl. Phys. Lett. 80, 3958 (2002).
  • W. Walukiewicz, J. Wu, K. M. Yu, J. Ager, E. E. Haller, I. Miotkowski, A. Ramdas, Ching-Hua Su, Origin of the Bandgap Bowing in ZnSe1-xTex Alloys, APS 2002 March Meeting, Indianapolis, March 18-22, 2002.
  • J. Wu, W. Walukiewicz, K. M. Yu, J. Ager, E. E. Haller, Y. Hong, H. Xin, C. Tu, Band Anticrossing in GaP1-xNx Alloys, APS 2002 March Meeting, Indianapolis, March 18-22, 2002.
  • J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Y. Hong, H. P. Xin, and C. W. Tu,  Band Anticrossing in GaP1-xNx Alloys, Phys. Rev. B65, 241303 (R) (2002).
  • K. M. Yu, W. Walukiewicz, J. Wu, J. W. Beeman, J. W. Ager, E. E. Haller, I. Miotkowski, A. K. Ramdas, and P. Becla, "Group II-Ox-VI1-x Highly Mismatched Alloys: Band Anticrossing in Cd1-yMnyOxTe1-x Alloys Synthesized by O ion implantation," Appl. Phys. Lett. 80, 1571 (2002).
  • W. Walukiewicz, Kin Man Yu, J. Wu, J. W. Ager, E. E. Haller, I. Miotkowski, A. K. Ramdas, and Ching-Hua Su,  Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys," in Compound semiconductors 2001: proceedings of the Twenty-Eighth International Symposium on Compound Semiconductors held in Tokyo, Japan, 1-4 October 2001 / edited by Yasuhiko Arakawa et al (Institute of Physics, Bristol, U.K., 2002) pp.301-6.
2001
  • J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, W. Shan, E. E. Haller, I. Miotkowski, M. J. Seong, H. Alawadhi, and A. K. Ramdas, "Band Anticrossing Effects in MgyZn1-yTe1-xSex Alloys," Appl. Phys. Lett. 80, 34 (2001).
  • W. Walukiewicz, K. M. Yu, J. Wu, J. W. Ager III, and E. E. Haller, " Band Anticrossing in Highy Mismatched Semiconductor Alloys: Transition Between Defect-like and Band-like States," pres. at the 21st International Conference on Defects in Semiconductors (ICDS21), July 16 - 20, 2001, Giessen, Germany.
  • J. Jasinski, K. M. Yu, W. Walukiewicz, Z. Liliental-Weber and J. Washburn, " Influence of Microstructure on Electrical Properties of Diluted GaNxAs1-x Formed by Nitrogen implantation," Appl. Phys. Lett. 79, 931 (2001).
  • J. Jasinski, K. M. Yu, W. Walukiewicz, Z. Liliental-Weber and J. Washburn, " Effects of Structural Defects on the Activation of Sulfur Donors in GaNxAs1-x formed by N implantation," Physica B308-310, 874 (2001).
  • J. Wu, W. Shan, W. Walukiewicz, K.M. Yu, J. W. Ager III, E. E. Haller, H.P. Xin, and C.W. Tu, Effect of Band Anticrossing on the Optical Transitions in GaAs1-xNx/GaAs Multiple Quantum Wells, Phys. Rev. B64, 085320 (2001).
  • K. M. Yu, W. Walukiewicz, J. Wu, J. W. Beeman, J. W. Ager III, E. E. Haller, W. Shan, H. P. Xin, C. W. Tu, and M. C. Ridgway, Formation of Diluted III-V Nitrides by N Ion Implantation," J. Appl. Phys. 90, 2227 (2001).
  • K. M. Yu, W. Walukiewicz, W. Shan, J. Wu, J. W. Beeman, J. W. Ager III, E. E. Haller, H. P. Xin, and C. W. Tu, Synthesis of InNxP1-x Thin Films by N Ion Implantation," Appl. Phys. Lett. 78, 1077 (2001).
  • K. M. Yu, W. Walukiewicz, W. Shan, J. Wu, J. Beeman, J. W. Ager III, E. E. Haller, and M. C. Ridgway, Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation, Mater. Res. Soc. Symp. Proc. 647, O13.3.1/R8.3.1 (2001).
  • W. Shan, W. Walukiewicz, K. M. Yu, J.W. Ager III, E. E. Haller, J.F. Geisz, D.J. Friedman, J.M. Olson, Sarah R. Kurtz, H.P. Xin and C.W. Tu, Band Anticrossing in III-N-V Alloys, Phys. Stat. Sol. (b) 223, 75 (2001).
2000
  • W Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, E. E. Haller, I. Miotkowski, J. M. Seong, H. Alawadhi and A. K. Ramdas, Electronic Structure of Highly Mismatched Semiconductor Alloys, pres. at the 25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka City, Japan.
  • K. M. Yu, W. Walukiewicz, W. Shan, J. Wu, J. W. Beeman, J. W. Ager III, and E. E. Haller, Increase in Activation in the Near-Surface Region of Sulfur and Nitrogen co-implanted GaAs, App. Phys. Lett. 77, 3607 (2000).
  • K. M. Yu, W. Walukiewicz, W. Shan,  J. Wu, J. W. Ager III, E. E. Haller, J. F. Geisz, and M.C. Ridgway, Nitrogen-Induced Enhancement of the Electron Concentration in Sulfur Implanted GaNxAs1-x, Appl. Phys. Lett. 77, 2858 (2000).
  • W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, E. E. Haller, I. Miotlowski, M. J. Seong, H. Alawadhi, and A. K. Ramdas,  Interaction of Localized Electronic States with the Conduction Band: Band Anticrossing in II-VI Semiconductor Ternaries, Phys. Rev. Lett. 85, 1552 (2000).
  • W. Shan; W. Walukiewicz, K. M. Yu, J. W. Ager III; E. E. Haller; J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, H. P. Xin, and C.W. Tu, "Effect of nitrogen on the band structure of III-N-V alloys,"  Proc. of the SPIE vol. 3944, pt.1-2, (Physics and Simulation of Optoelectronic Devices VIII,San Jose, CA, USA, 24-28 Jan. 2000.) SPIE-Int. Soc. Opt. Eng, 2000. p.69-79.
  • W. Shan, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, Sarah R. Kurtz, and K. Nauka, Effect of Nitrogen on the Electronic Band Structure of Group III-N-V Alloys, Phys. Rev. B62, 4211 (2000).
  •  W. Shan, W. Walukiewicz, K.M. Yu, J.W. Ager, III, E.E. Haller, H.P. Xin, C.W. Tu, Optical Transitions in GaNP Alloys, pres. at the American Physical Society 2000 March Meeting, Minneapolis, March 20-24, 2000.
  • W. Shan, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. P. Xin, and C. W. Tu, Nature of the Fundamental Bandgap in GaNxP1-x Alloys, Appl. Phys. Lett. 76, 3251 (2000).
  • C. Skierbiszewski, P. Perlin, P. Wi?niewski, W. Knap, T. Suski, W. Walukiewicz, W. Shan, K. M. Yu,  J.W. Ager, E.E. Haller, J.F. Geisz, and J.M. Olson, Large, Nitrogen-Induced Enhancement of the Electron Effective Mass in InyGa1?yNxAs1?x, Appl. Phys. Lett. 76, 2409 (2000).
  • K. M. Yu, W. Walukiewicz, W. Shan, J. W. Ager III, J. Wu, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and Sarah R. Kurtz, Nitrogen-Induced Enhancement of the Maximum Electron Concentration in Group III-N-V Alloys, Phys. Rev. B61, R13337 (2000).
1999
  • W. Shan, K.M. Yu, W. Walukiewicz, J. W. Ager III, E. E. Haller, and M. C. Ridgway, Reduction of Band-gap Energy in GaNAs and AlGaNAs synthesized by N+ implantation, Appl. Phys. Lett. 75, 1410 (1999).

Spintronics Materials

2012
  • M. Dobrowolska,  K. Tivakornasithorn, X. Liu, J. K. Furdyna, M. Berciu, K. M. Yu and W. Walukiewicz, “Controlling Curie temperature in (GaMn)As through location of the Fermi level within the impurity band, “Nature Materials, 11, 444–449 (2012)
2011
  • Q. Song, K. H. Chow, Z. Salman, H. Saadaoui, M. D. Hossain, R. F. Kiefl, C. D. P. Levy, M. R. Pearson, T. J. Parolin, M. Smadella, D. Wang, K. M. Yu, X. Liu, J. K. Furdyna, and W.A. MacFarlane, “b-detected NMR of Li in Ga1−xMnxAs,” Phys. Rev. B 84, 054414 (2011).
  • T. E. Winkler, P. R. Stone, Tian Li, K. M. Yu, A. Bonanni, and O. D.Dubon, “Compensation-dependence of magnetic and electric properties in Ga1-xMnxP,” Appl. Phys. Lett. 98, 012103 (2011).
2010
  • M. A. Mayer, P. R. Stone, N. Miller, H. M. Smith III,  O. D. Dubon, E. E. Haller, K. M. Yu, W. Walukiewicz, X. Liu, and J. K. Furdyna, "Electronic structure of Ga1-xMnxAs analyzed according to hole-concentration-dependent measurements," Physical Review B, 81, 045205 (2010).
  • P. R. Stone, L. Dreher, J. W. Beeman, K. M. Yu, M.S. Brandt and O.D. Dubon, “Interplay of epitaxial strain and perpendicular magnetic anisotropy in insulating ferromagnetic Ga1−xMnxP1−yNy,” Phys. Rev. B81, 205210 (2010).
2009
  • R. Farshchi, D. J. Hwang, N. Misra, C. C. Julaton III, K. M. Yu, C. P. Grigoropoulos, and O. D. Dubon, “Structural, magnetic, and transport properties of laser-activated GaAs:Mn-H,” J. Appl. Phys. 106, 013904 (2009).
  • Q. Song, K. H. Chow, R. I. Miller, I. Fan, M. D. Hossain, R. F. Kiefl, S. R. Kreitzman, C. D. P. Levy, T. J. Parolin, M. R. Pearson, Z. Salman, H. Saadaoui, M. Smadella, D. Wang, K. M. Yu, X. Liu, J. K. Furdyna, W. A. MacFarlane, “Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn,” Physica B404, 892 (2009).
2008
  • A.W. Rushforth, N.R.S. Farley, R.P. Campion, K.W. Edmonds, C.R. Staddon, C.T. Foxon, B.L. Gallagher, and K. M. Yu, “Compositional Dependence of Ferromagnetism in (Al,Ga,Mn)As Magnetic Semiconductors,” Phys. Rev. B78, 085209 (2008).
  • D. Chiba, K. M. Yu and W. Walukiewicz, Y. Nishitani, F. Matsukura, and H. Ohno, “Properties of Ga1-xMnxAs with high x (>0.1),”J. Appl. Phys. 103, 07D136 (2008).
  • K. Alberi, K. M. Yu, P.R. Stone, O.D. Dubon, W. Walukiewicz, X. Liu, and J. K. Furdyna, “The formation of a Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing,” Phys. Rev. B78, 075201 (2008).
  • Y. J. Cho, M. A. Scarpulla, Y. Y. Zhou, Z. Ge, X. Liu, M. Dobrowolska, K. M. Yu, O. D. Dubon, and J. K. Furdyna, “Magnetic Anisotropy of Ferromagnetic Ga1-xMnxAs Formed by Mn Ion Implantation and Pulsed-Laser Melting,” J. Appl. Phys. 104, 043902 (2008).
  • Y. J. Cho, K. M. Yu, X. Liu, W. Walukiewicz, and J. K. Furdyna, “Effects of Donor Doping on properties of Ga1-xMnxAs,” Appl. Phys. Lett. 93, 262505 (2008).
  • M.A. Scarpulla, P.R. Stone, I.D. Sharp, E.E. Haller, O.D. Dubon, J.W. Beeman and K.M. Yu, “Non-magnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting,”  J. Appl. Phys. 103, 123906 ( 2008).
  • M. A. Scarpulla, R. Farshchi, P. R. Stone, R. V. Chopdekar, K. M. Yu, Y.Suzuki, and O. D. Dubon, “Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting,” J. Appl. Phys., 103, 073913 (2008).
  • Peter R. Stone, Jeffrey W. Beeman, Kin M. Yu, and Oscar D. Dubon, “Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors,” pres. at the 24th International Conference on Defects in Semiconductors (ICDS-24), 22-27 July 2007, Albuquerque, New Mexico, USA, Physica B 401–402 454–457 (2007).
  • P. R. Stone, C. Bihler, M. Kraus, M. A. Scarpulla, J. W. Beeman, K. M. Yu, M. S. Brandt and O. D. Dubon, “Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy,” Phys. Rev. B 78, 214421 (2008).
  • P.R. Stone, K. Alberi, S.K.Z. Tardif, J.W. Beeman, K. M. Yu, W. Walukiewicz and O.D. Dubon, “Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism,” Phys. Rev. Lett. 101, 087203 (2008).
2007
  • P.R. Stone, M.A. Scarpulla, R. Farshchi,I.D. Sharp, J.W. Beeman, K.M. Yu, E. Arenholz, J. Denlinger, E.E. Haller, and O.D. Dubon, “Mn L3,2 X-ray Absorption Spectroscopy And Magnetic Circular Dichroism In Ferromagnetic Ga1-xMnxP,” Physics of Semiconductors, 28th International Conference, edited by W. Jantsch and F. Schaffler (American Institute of Physics, 2007) p. 1177.
  • P.R. Stone, M.A. Scarpulla, R. Farshchi, I.D. Sharp, K.M. Yu, J.W. Beeman, E. Arenholz, E.E. Haller, and O.D. Dubon, “Compositional Tuning of Ferromagnetism in Ga1-xMnxP and Ga1-xMnxP-based Quaternary Alloys,” pres. at the  Materials Research Society Spring Meeting, April 9-13, 2007, San Francisco, CA.
2006
  • P. R. Stone, M. A. Scarpulla, R. Farshchi, I. D. Sharp, E. E. Haller, O.D. Dubon, K. M. Yu, J. W. Beeman, E. Arenholz, J. D. Denlinger, and H. Ohldag, “Mn L3,2 X-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP,” Appl. Phys. Lett. 89, 012504 (2006).
  • R. Farshchi, M. A. Scarpulla, P. R. Stone, K. M. Yu, H. H. Sylvestri, I. D. Sharp, J. W. Beeman, L. A. Reichertz, E. E. Haller, and O.D. Dubon, “Compositional tuning of magnetism and electronic transport in Ga1-xMnxP,” Solid State Communications 140, 443–446 (2006).
2005
  • C. Liu, F. Yun, B. Xiao, S.-J. Cho, and H. Morkoç, P. Ruteranan, K. M. Yu and W. Walukiewicz, “Structural Analysis of Ferromagnetic Mn-doped ZnO Thin Films Deposited by Radio Frequency Magnetron Sputtering,” J. Appl. Phys. 97, 126107(2005).
  • K. M. Yu, W. Walukiewicz, T. Wojtowicz, J. Denlinger, M. A. Scarpulla, X. Liu, and J. K. Furdyna, “The Effect of Film Thickness on the Incorporation of Mn Interstitials in Ga1-xMnxAs,” Appl. Phys. Lett., 86, 042102, 2005.
  • K. M. Yu, W. Walukiewicz, T. Wojtowicz, X. Liu, and J. K. Furdyna, “Effect of The Location of Mn on the Ferromagnetism of III1-xMnxV Semiconductor Alloys,” Invited talk, pres. at the 27th International Conference on the Physics of Semiconductors, July 26-30, 2004, Flagstaff, Arizona. Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff, AZ, July 26-30, 2004; AIP Conference Proceedings, Vol. 772, 303-6 (2005).
  • K. M. Yu, W. Walukiewicz, W. Schoch, C. Bihler, and M. S. Brandt, “ Lattice displacement of Mn atoms in deuterated GaMnAs,” submitted to the 23rd International Conference on Defects in Semiconductors ICDS-23, July 24 - July29, 2005, Awaji Island, Hyogo, Japan.
  • M. A. Scarpulla, B. L. Cardozo, R. Farshchi, W. M. Hlaing Oo, M. D. McCluskey, K. M. Yu, and O. D. Dubon, “Ferromagnetism in Ga1-xMnxP: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band,” Phys. Rev. Lett. 95, 207204 (2005).
  • M.A. Scarpulla, K.M. Yu, W. Walukiewicz, and O.D. Dubon, “Probing carrier-mediated ferromagnetism in Ga1-xMnxAs1-yTey,” Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff, AZ, July 26-30, 2004; AIP Conference Proceedings, Vol. 772, 1367-8 (2005).
  • O. D. Dubon and M. A. Scarpulla, K. M. Yu and W. Walukiewicz, “Diluted Semiconductors Formed from Energetic Beams,” invited paper, 31st International Symposium on Compound Semiconductors, September 12-16, 2004, Seoul, Korea. Compound Semiconductors 2004, PROCEEDINGS INSTITUTE OF PHYSICS CONFERENCE SERIES 184: 399-404 2005.
  • T. Wojtowicz, X. Liu, J. K. Furdyna, B. Janko, K. M. Yu, and W. Walukiewicz R. P. Panguluri, B. Nadgorny, M. Csontos and G. Mihály,” Peculiarities of the MBE Growth and Properties of Ferromagnetic III-Mn-V alloys”, invited presentation at the XXXIV International School on the Physics of Semiconducting Compounds, June 6-10, 2005, Jaszowiec, Poland.
  • T. Wojtowicz, X. Liu, J.K. Furdyna, B. Janko, K.M. Yu, W. Walukiewicz, R.P. Panguluri, B. Nadgorny, M. Csontos, G. Mihály “Peculiarities of the MBE Growth and Properties of Ferromagnetic III-Mn-V Alloys” invited talk, presented at the XXXIV International School on the Physics of Semiconducting Compounds Jaszowiec 2005, June 4 - 10, 2005, Warsaw, POLAND.
  • Walukiewicz, Malgorzata Dobrowolska, Jacek Furdyna, “Magnetic anisotropy of strain-engineered InMnAs ferromagnetic films and easy-axis manipulation from out-of-plane to in-plane orientations,” Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff, AZ, July 26-30, 2004; AIP Conference Proceedings, Vol. 772, 367-8 (2005).
  • X. Liu, W. L. Lim, Z. Ge, S. Shen, M. Dobrowolska, J. K. Furdyna, T. Wojtowicz, K. M. Yu and W. Walukiewicz, “Strain-engineered ferromagnetic In1-xMnxAs films with in-plane easy axis,” Appl. Phys. Lett. 86, 112512 (2005).
2004
  • D. Ruzmetov, J. Scherschligt, David V. Baxter,T. Wojtowicz, X. Liu Y. Sasaki, J.K. Furdyna, K.M. Yu, and W. Walukiewicz, “High-Temperature Hall Effect in Ga1-xMnxAs,” Phys. Rev B69, 155207 (2004).
  • J. K. Furdyna, T. Wojtowicz, X. Liu, K. M. Yu, W. Walukiewicz, I. Vurgaftman, and J. R. Meyer, “Fermi level effects on Mn incorporation in modulation-doped ferromagnetic III1-xMnxV heterostructures,” invited paper, International Conference on Nanospintronics Design and Realization, Kyoto, JAPAN, May 24-28, 2004, J. Phys.: Condens. Matter 16, S5499–S5508, 2004.
  • J. K. Furdyna, X. Liu, W.Walukiewicz, T. Wojtowicz, and K. M. Yu, ” Electronic Effects in Epitaxial Growth of Ferromagnetic III1-xMnxV Alloys,” invited talk, 2003 Lawrence Symposium: Critical Issues in Epitaxy, October 9-11, 2003, Tempe, AZ.
  • K. M. Yu and W. Walukiewicz, T. Wojtowicz, W.L. Lim, X. Liu, M. Dobrowolska, and J. K. Furdyna, “Direct Evidence of the Fermi-Energy-Dependent Formation of Mn Interstitials in Modulation Doped Ga1-yAlyAs/Ga1-xMnxAs/Ga1-yAlyAs Heterostructures,” Appl. Phys. Lett. 84, 4325 (2004).
  • K. M. Yu, W. Walukiewicz, T. Wojtowicz, W. L. Lim, X. Liu, M. Dobrowolska, and J. K. Furdyna, ”Lattice Location of Mn and Fundamental Curie Temperature Limit in Ferromagnetic Ga1-xMnxAs,” pres. at the 16th International Conference on Ion Beam Analysis, June 29-July 4, 2003, Albuquerque, NM, Nucl. Instrum. Meth. B219-220, 636 (2004).
  • M. A. Scarpulla, O. D. Dubon , K. M. Yu, W. Walukiewicz, “Effects of Counter-Doping on The Transport and Magnetic Properties of Ga1-xMnxAs1-yTey,” pres. at the American Phys. Society March Meeting, Montreal, Quebec, Canada, March 22-26, 2004.
  • T. Wojtowicz, J. K. Furdyna, X. Liu, K. M. Yu, and W. Walukiewicz, “Electronic effects determining the formation of ferromagnetic III1-xMnxV alloys during epitaxial growth,” invited presentation at the 13th International Winterschool on New Developments in Solid State Physics, 15-20 February, 2004, Mauterndorf, Province of Salzburg, Austria, Physica E 25, 171-180 (2004).
  • T. Wojtowicz , W.L. Lim, X. Liu, G. Cywinski, M. Kutrowski, L. V. Titova, K. Yee, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz,  G. B. Kim, M. Cheon, X. Chen, S.M. Wang,  H. Luo, I. Vurgaftman, and J.R. Meye, “Growth and properties of ferromagnetic In1-xMnxSb alloys,” invited presentation at the 11th International Conference on Narrow Gap Semiconductors, Buffalo, June 16 - 20, 2003, New York, U.S.A., Physica E 20, 325 – 332 (2004).
  • T. Wojtowicz, W. L. Lim, X. Liu, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, I. Vurgaftman, J. R. Meyer, “Enhancement of Curie Temperature in GaMnAs by Be Remote Doping,” pres. at the American Phys. Society March Meeting, Montreal, Quebec, Canada, March 22-26, 2004.
  • T. Wojtowicz, X. Liu, J. K. Furdyna, K. M. Yu, and W. Walukiewicz, “Electronic Effects in Epitaxial Growth of Ferromagnetic III1-xMnxV Alloys,” invited talk, presented at the 13th Semi-conducting and Insulating Materials Conference SIMC XIII, Sept. 20-25, 2004, Beijing, China.
2003
  • D. Ruzmetov, D.V. Baxter, J. Scherschligt (Dept. of Physics, Indiana University, Bloomington, IN), T. Wojtowicz, X. Liu, Y. Sasaki, J.K. Furdyna, K.M. Yu, W. Walukiewicz, “High-Temperature Hall Resistance in Ga(1-x)Mn(x)As,” pres. at American Phys. Society March Meeting, Austin, TX, March 3-7, 2003.
  • J. K. Furdyna, S. Lee,T. Wojtowicz, X. Liu, W.L. Lim, I. Kuryliszyn, Y. Sasaki, K. M. Yu, and W. Walukiewicz, “Ferromagnetic III-Mn-V Semiconductors: Manipulation of Magnetic Properties by Annealing, Extrinsic Doping, and Multilayer Design,” invited paper, the 11th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA)-2002, August 20-23, 2002, Jeju Island, Korea, J. Korean Phys. Soc., Vol. 42, S579-S590 (2003).
  • K. M. Yu and W. Walukiewicz, T. Wojtowicz, W.L. Lim, X. Liu, Y. Sasaki, M. Dobrowolska, and J. K. Furdyna, “Curie Temperature Limit in Ferromagnetic Ga1-xMnxAs,” Phys. Rev. B68, 041308(R) (2003).
  • M. A. Scarpulla, K.M. Yu, O. Monteiro, M. Pillai, M.C. Ridgway, M.J. Aziz, and O.D. Dubon, “Ferromagnetic Ga1-xMnxAs films produced by Ion Implantation and Pulsed Laser Melting,” Appl. Phys. Lett. 82, 1251 (2003).
  • M.A. Scarpulla, U. Daud, K. M. Yu, O. Monteiro, Z. Liliental-Weber, D. Zakharov, W. Walukiewicz, and O.D. Dubon, “Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting,” pres. at the 22nd International Conference on Defects in Semiconductors (ICDS-22), July 28-August 1, 2003, Aarhus, Denmark, Physica B 340–342, 908 (2003).
  • Oscar D. Dubon, M. A. Scarpulla, K. M. Yu, W. Walukiewicz, O. Monteiro, “Synthesis of diluted semiconductor alloys by ion implantation and pulsed laser melting,” pres. At the Mater. Res. Soc. Spring Meeting Symposium Y: Advanced Optical Processing of Materials, April 21-25, 2003, San Francisco, CA.
  • T. Wojtowicz, G. Cywinski, W.L. Lim, X. Liu, M. Dobrowolska, and J. K. Furdyna, K. M. Yu and W. Walukiewicz, X. Chen, S.M. Wang, G.B. Kim, M. Cheon, and H. Luo, “ In1-xMnxSb - a new narrow gap ferromagnetic semiconductor,” Appl. Phys. Lett. 82, 4310 (2003).
  • T. Wojtowicz, W.L. Lim, X. Liu, M. Dobrowolska, and J. K. Furdyna, K. M. Yu and W. Walukiewicz, I. Vurgaftman and J. R. Meyer, “Mechanisms Limiting the Curie temperature in GaMnAs”invited paper, International Conference and School on Semiconductor Spintronics and Quantum Information Technology, Spintech II, August 4-8, 2003, Brugge (Belgium).
  • T. Wojtowicz, W.L. Lim, X. Liu, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, I. Vurgaftman, and J. R. Meyer, “Enhancement of Curie temperature in Ga1-xMnxAs/Ga1-yAlxAs ferromagnetic heterostructures by Be modulation doping,” Appl. Phys. Lett. 83, 4220 (2003).
  • T. Wojtowicz, W.L. Lim, X. Liu, M. Dobrowolska, J.K. Furdyna, K.M. Yu, W. Walukiewicz, X. Chen, S.M. Wang, G.B. Kim, M. Cheon, and H. Luo, “(In,Mn)Sb – A New Narrow Gap Ferromagnetic Semiconductor,” American Phys. Society March Meeting, Austin, TX, March 3-7, 2003.
  • T. Wojtowicz, W. L. Lim, X. Liu, Y. Sasaki, U. Bindley, M. Dobrowolska, J. K. Furdyna, K. M. Yu, and W. Walukiewicz,  “Correlation of the Mn lattice location, free hole concentration, and Curie temperature in ferromagnetic GaMnAs,” J. of Superconductivity: Incorporating Novel Magnetism 16, 41 (2003).
2002
  • J. Blinowski, P. Kacman, K. M. Yu, W. Walukiewicz, T. Wojtowicz, J. K. Furdyna, “Effect of Interstitial Mn on the Magnetic Properties of GaMnAs,” Proc. XXXI Int. School on the Phys. of Semicond. Comp. , Jaszowiec p. 33 (2002).
  • K. M. Yu, “Correlation of the Mn lattice location, free hole concentration, and Curie temperature in ferromagnetic GaMnAs,” invited talk presented at the 44th  Electronic Materials Conference, Santa Barbara, California, June 26-28, 2002.
  • K. M. Yu, W. Walukiewicz, T. Wojtowicz, I. Kuryliszyn, X. Liu, Y. Sasaki, and J.K. Furdyna, “Effect of the lattice site locations of Mn atoms on the magnetic properties of GaMnAs,” APS 2002 March Meeting, Indianapolis, March 18-22, 2002.
  • K. M. Yu, W. Walukiewicz, T. Wojtowicz, I. Kuryliszyn, X. Liu, Y. Sasaki, and J.K. Furdyna, “Effect of the location of Mn sites in ferromagnetic Ga1-xMnxAs on its Curie temperature,” Phys. Rev. B65, 201303(R) (2002).
  • K. M. Yu, W. Walukiewicz, T. Wojtowicz, W.L. Lim, X. Liu, Y. Sasaki, M. Dobrowolska, and J.K. Furdyna, “Determination of Hole Concentration in Ferromagnetic GaMnAs Using Electrochemical Capacitance-Voltage Profiling,” Appl. Phys. Lett. 81, 845 (2002).
  • K. M. Yu and W. Walukiewicz, T. Wojtowicz, I. Kuryliszyn, X. Liu, Y. Sasaki, and J. K. Furdyna, “Thermodynamic Limits to the Maximum Curie Temperature in GaMnAs,” Physics of Semiconductors 2002: Proceedings of the 26th International Conference on the Physics of Semiconductors (Institute of Physics, Bristol, 2002) F2.3.
  • M. A. Scarpulla, O. D. Dubon, K. M. Yu, Monteiro, Z. Liliental-Weber, M. Pillai, M. J. Aziz, and M. C. Ridgway, “ Structure and Properties of Dilute Magnetic Semiconductors formed by Implantation and Pulsed Laser Melting,” pres. at the Mater. Res. Soc. Fall Meeting, Symposium: P, December 2-6, 2002, Boston, Massachusetts.
  • Michael A. Scarpulla, K. M. Yu, Manoj R. Pillai, Mark C. Ridgway, Michael J. Aziz, Oscar D. Dubon, “Ferromagnetic Ga1-xMnxAs and Ga1-xMnxAs1-yCy Produced by Ion Implantation and Laser Annealing,” to be pres. at the 44th  Electronic Materials Conference, Santa Barbara, California, June 26-28, 2002.
  • W. Walukiewicz, K. M. Yu, T. Wojtowicz, I. Kuryliszyn, X. Liu, Y. Sasaki, and J. K. Furdyna, “Thermodynamic Limits to the Maximum Curie Temperature in GaMnAs,” invited paper, pres. at the Mater. Res. Soc. Fall Meeting, Symposium: P, December 2-6, 2002, Boston, Massachusetts.

Other Articles

2008
  • F. Z. Amir, K. Clark, E. Maldonado, W. P. Kirk, J. C. Jiang, J. W. Ager III, K. M. Yu, and W. Walukiewicz, “Epitaxial growth of CdSexTe1-x thin films on Si (1 0 0) by molecular beam epitaxy using lattice mismatch graded structures,” J. Cryst. Growth 310, 1081 (2008).

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