Group III-Nitrides
Highly-mismatched Alloys (HMAs)
Experimental Techniques
Theoretical Models
|
Research
Subpages (10):
Application: Multiband Solar Cell
Application: Photo-electrochemical Cell (PEC)
Band Anti-crossing Model
Band offsets of semiconductors
Basic Properties of InGaN and In-rich Group III-Nitrides
Dilute Nitrides
Dilute Oxides
Evidence of P-type InN, InGaN Alloys
Full composition GaNAs HMA
Pulsed Laser Melting (PLM)
Comments