Research - Solar Energy Materials Research Group

Research

Group III-Nitrides

Basic Properties of InGaN and In-rich Group III-Nitrides
Irradiation Studies of InGaN
Evidence of P-type InN, InGaN Alloys
Application: Full-Spectrum Solar Cell

Highly-mismatched Alloys (HMAs)

Experimental Techniques

Hall Effect
Rutherford Back Scattering (RBS)
Ion Channeling
Proton Induced X-ray Emission Spectroscopy (PIXE)
Photoluminescence (PL)
Optical Absorption
Photomodulated Reflectance (PR)
Raman Spectroscopy
Diamond Anvil Cell
Electrochemical Capacitance-Voltage (ECV)
IR Spectroscopy
E-beam and Sputtering Deposition
Rapid Thermal Annealing (RTA) and Furnace Annealing

Theoretical Models

Band Anti-crossing Model
Valence Band Anticrossing
Amphoteric Defect Model
Band offsets of semiconductors

Subpages (10): Application: Multiband Solar Cell Application: Photo-electrochemical Cell (PEC) Band Anti-crossing Model Band offsets of semiconductors Basic Properties of InGaN and In-rich Group III-Nitrides Dilute Nitrides Dilute Oxides Evidence of P-type InN, InGaN Alloys Full composition GaNAs HMA Pulsed Laser Melting (PLM)

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