Search this site
Home
People
Research
Publications
Contact
News
Navigation
Home
People
Research
Basic Properties of InGaN and In-rich Group III-Nitrides
Evidence of P-type InN, InGaN Alloys
Dilute Nitrides
Dilute Oxides
Full composition GaNAs HMA
Pulsed Laser Melting (PLM)
Application: Multiband Solar Cell
Application: Photo-electrochemical Cell (PEC)
Band Anti-crossing Model
Band offsets of semiconductors
Publications
Contact
News
Research-old
Group III-Nitrides
Basic Properties of InGaN and In-rich Group III-Nitrides
Irradiation Studies of InGaN
Evidence of P-type InN, InGaN Alloys
Application: Full-Spectrum Solar Cell
Highly-mismatched Alloys (HMAs)
Dilute Nitrides
Dilute Oxides
Pulsed Laser Melting (PLM)
Application: Multiband Solar Cell
Application: Photo-electrochemical Cell (PEC)
Experimental Techniques
Hall Effect
Rutherford Back Scattering (RBS)
Ion Channeling
Proton Induced X-ray Emission Spectroscopy (PIXE)
Photoluminescence (PL)
Optical Absorption
Photomodulated Reflectance (PR)
Raman Spectroscopy
Diamond Anvil Cell
Electrochemical Capacitance-Voltage (ECV)
IR Spectroscopy
E-beam and Sputtering Deposition
Rapid Thermal Annealing (RTA) and Furnace Annealing
Theoretical Models
Band Anti-crossing Model
Valence Band Anticrossing
Amphoteric Defect Model
Band offsets of semiconductors
Comments