Group III-Nitrides Basic Properties of InGaN and In-rich Group III-Nitrides Irradiation Studies of InGaN Evidence of P-type InN, InGaN Alloys Application: Full-Spectrum Solar Cell Highly-mismatched Alloys (HMAs) Dilute Nitrides Dilute Oxides Pulsed Laser Melting (PLM) Application: Multiband Solar Cell Application: Photo-electrochemical Cell (PEC)

Experimental Techniques Hall Effect Rutherford Back Scattering (RBS) Ion Channeling Proton Induced X-ray Emission Spectroscopy (PIXE) Photoluminescence (PL) Optical Absorption Photomodulated Reflectance (PR) Raman Spectroscopy Diamond Anvil Cell Electrochemical Capacitance-Voltage (ECV) IR Spectroscopy E-beam and Sputtering Deposition Rapid Thermal Annealing (RTA) and Furnace Annealing

Theoretical Models Band Anti-crossing Model Valence Band Anticrossing Amphoteric Defect Model Band offsets of semiconductors